iop-cas-M02group

[71] Two-dimensional Material-based Magnon Magnetoresistance Device and Electronic Equipment         Including the Same
        Han Xiufeng, Xing Yaowen
        Patent: ZL202010196853.2
        Patent: US 11,808,828 B2

[70] Spin Wave Switch and Filter Based on Magnonic Crystals
        Han Xiufeng, Xing Yaowen, Yan Zhengren
        Patent: US 11,699,543 B2

[69] Magnon Magnetoresistance and Spin Hall Magnetoresistance Devices Based on Magnon Valve and         Magnon Junction
        Han Xiufeng, Guo Chenyang, Wan Caihua
        Patent: ZL201910125883.1

[68] Giant Magnetoresistance Device, Magnon Field-Effect Transistor, and Magnon Tunnel Junction
        Han Xiufeng, Tang Ping, Guo Chenyang, Wan Caihua
        Patent: ZL201711415711.5
        Patent: JP 6838041

[67] Magnetic Isolation Device, Magnetic Memory, Magnetic Current Sensor, and Magnetic         Temperature Sensor
        Han Xiufeng, Wu Hao, Wan Caihua
        Patent: ZL201510659034.6

Spin Logic, Spin-Orbit Torque Magnetic Random Access Memory (SOT-Spin Logic and SOT-MRAM)

[66] Giant Magnetoresistance Device and Magnetic Tunnel Junction Structure and Electronic Equipment         Including the Same
        Han Xiufeng, Fang Chi, Wan Caihua
        Patent: ZL201910619674.2

[65] Magnetic Multilayer Structure, Magnetic Memory, Spin Logic Device, and Electronic Equipment
        Han Xiufeng, Wang Xiao, Wan Caihua
        Patent: ZL201810310401.5

[64] Programmable Multi-Functional Spin Logic Circuit
        Yin Ningyuan, Wan Caihua, Huang Baofa, Yu Zhiyi, Han Xiufeng
        Patent: ZL201710211554.X

[63] Programmable Spin Logic Device and Electronic Equipment Including the Same
        Han Xiufeng, Zhang Xuan, Wan Caihua
        Patent: ZL201610190767.4
        Patent: US10153425B2

[62] Spin Logic Device and Electronic Equipment Including the Same
        Zhang Xuan, Wan Caihua, Han Xiufeng
        Patent: ZL201610064129.8

[61] Current-Driven Magnetic Random Access Memory and Spin Logic Device
        Wan Caihua, Zhang Xuan, Han Xiufeng
        Patent: ZL201510574526.5

[60] Logic Device Based on Reversible Electroresistance Effect
        Han Xiufeng, Li Dalai, Liu Dongping
        Patent: ZL201110305257.4

[59] A Magnetic Multilayer Random Access Memory Based on Vertical Transistor
        Liu Dongping, Han Xiufeng*
        Patent: ZL201510659034.6

[58] A Magnetic Multilayer Film and Its Magnetic Logic Element and Magnetic Random Access         Memory
        Liang Shiheng, Liu Dongping, Wen Zhenchao, Han Xiufeng*
        Patent: ZL200910238243.8

[57] A Magnetic Random Access Memory, Magnetic Logic Device, and Spin Microwave Oscillator
        Chen Junyang, Liu Dongping, Wen Zhenchao, Han Xiufeng*, Zhang Shufeng
        Patent: ZL200910076048.X

[56] Logic Element and Magnetic Logic Element Array Based on Double Barrier Magnetic Tunnel         Junction
        Zeng Zhongming, Wei Hongxiang, Jiang Lixian, Han Xiufeng*, Peng Zilong, Zhan Wenshan
        Patent: ZL200610072795.2

[55] Magnetic Logic Element Based on Ring-Shaped Closed Magnetic Multilayer Film
        Han Xiufeng*, Zeng Zhongming, Han Yunan, Jiang Lixian, Peng Zilong, Zhan Wenshan
        Patent: ZL200610072797.1
        Patent: US8236576B2

Current-Driven, Electric Field-Assisted Driven, Perpendicular Magnetic Anisotropy Structure, Magnetic Domain Wall Motion, Magnetic Field-Driven, etc. 5 Types of 10 Magnetic Random Access Memories. SOT-MRAM, STT-MRAM, E-MRAM, p-MRAM, DW-MRAM, Field-MRAM, etc.

[54] Spin Transfer Torque Magnetic Random Access Memory Including Ring-Shaped Magnetic Tunnel         Junction
        Han Xiufeng, Qin Jianying, Liu Houfang, Zhang Yaojun, Guo Peng, Chen Yiran, Li Hai, Wei         Hongxiang, Feng Jiafeng, Zhan Wenshan
        Patent: ZL201510634769.3

[53] Closed-Shaped Magnetic Tunnel Junction(Utility Model Patent)
        Tao Bingshan, Li Dalai, Liu Houfang, Han Xiufeng
        Patent: ZL201420275983.5

[52] Nano Multilayer Film, Field Effect Transistor, Sensor, Random Access Memory, and Preparation         Method
        Han Xiufeng, Liu Houfang, Rui Zhiwan
        Patent: ZL201110304804.7

[51] An Electric Field-Modulated Random Access Memory Cell Array and Memory
        Han Xiufeng, Yu Guoqiang, Chen Yiran
        Patent: ZL201110304812.1

[50] A Magnetic Multilayer Film for Magnetic Random Access Memory
        Yu Guoqiang, Wei Hongxiang, Zhan Wenshan, Han Xiufeng
        Patent: ZL201010259764.4

[49] A Lookup Table Based on Nano Ring-Shaped Magnetic Multilayer Film
        Yu Guoqiang, Ni Jinghua, Wu Jingang, Ji Minghua, Han Xiufeng
        Patent: ZL201010234523.4

[48] A Magnetic Random Access Memory Cell Array, Memory, and Read/Write Method
        Wang Yi, Li Hai, Han Xiufeng
        Patent: ZL201010226272.5

[47] A magnetic multilayer film unit and its preparation and magnetic moment reversal method
         Wen Zhenchao, Yu Guoqiang, Wang Yi, Wei Hongxiang, Zhang Shufeng, Han Xiufeng*
         Invention patent: ZL 200910241587.4

[46] Magnetic multilayer film with geometric shape and its preparation method and use
         Han Yunan, Wen Zhenchao, Du Guanxiang, Zhao Jing, Liu Dongping, Han Xiufeng*
         Invention patent: ZL200710063352.1

[45] A magnetic multilayer film with closed shape containing a metal core and its preparation method         and use
        Jiang Lixian, Ma Ming, Han Yunan, Qin Qihang, Wei Hongxiang, Han Xiufeng*
        Invention patent: ZL200610011167.3
         Invention patent: US7,936,595 B2

[44] A closed-shaped magnetic multilayer film and its preparation method and use
         Jiang Lixian, Ma Ming, Han Yunan, Qin Qihang, Wei Hongxiang, Han Xiufeng*
        Invention patent: ZL200610011166.9

[43] Magnetic random access memory based on closed magnetic multilayer film and control method
         Han Xiufeng*, Ma Ming, Jiang Lixian, Han Yunan, Qin Qihang, Wei Hongxiang
        Invention patent: ZL200610011168.8

[42] Magnetic random access memory based on annular magnetic multilayer film and its control method
         Han Xiufeng*, Ma Ming, Jiang Lixian, Han Yunan, Qin Qihang, Wei Hongxiang
        Invention patent: ZL200610000191.7

[41] A ring-shaped magnetic multilayer film and its preparation method and use
         Ma Ming, Han Xiufeng*, Jiang Lixian, Han Yunan, Qin Qihang, Wei Hongxiang
        Invention patent: ZL200510135365.6

[40] A ring-shaped magnetic multilayer film containing a metal core and its preparation method and use
         Ma Ming, Han Xiufeng*, Jiang Lixian, Han Yunan, Qin Qihang, Wei Hongxiang
        Invention patent: ZL200510135370.7

[39] A magnetic tunnel junction suitable for deviceization and its use
         Wei Hongxiang, Ma Ming, Qin Qihang, Han Xiufeng*, Zhan Wenshan
        Invention patent: ZL200510130665.5

[38] A magnetic random access memory based on vertical current writing and its control method
         Peng Zilong, Han Xiufeng*, Zhao Sufen, Wang Weining, Zhan Wenshan
        Invention patent: ZL200410030729.X
         Invention patent: US7,480,171 B2

Magnetoresistance and magnetoresistive sensors (TMR and GMR based ensors)

[37] Magnetic tunnel junction and magnetic devices and electronic devices including the same
         Han Xiufeng, Wan Caihua, Zhang Xuan
         Invention patent: ZL201710093931.4

[36] A nanomagnetic multilayer film for temperature sensor and its manufacturing method
         Han Xiufeng, Yuan Zhonghui, Liu Pan, Yu Guoqiang, Feng Jiafeng, Zhang Dianlin
         Invention patent: ZL201480000687.7
        Invention patent: Patent No. 6105817
        Invention patent: US9484527B2

[35] A magnetic nano multilayer film for magnetic sensitive sensor and its preparation method
        Wu Hao, Feng Jiafeng, Chen Junyang, Han Xiufeng
         Invention patent:ZL201210285542.9

[34] Anisotropic modulatable magnetic film structure, magnetic sensor and preparation method
         Yu Tian, Wang Wenxiu, Han Xiufeng
         Invention patent: CN102810630B

[33] A magnetic nano multilayer film for magnetic sensitive sensor and its manufacturing method
         Ma Qinli, Liu Houfang, Han Xiufeng
         Invention patent: ZL201010195799.6
         Invention patent: US9568564B2

[32] A planar integrated three-dimensional magnetic field sensor and its preparation method and use
         Qin Qihang, Han Xiufeng*, Wang Lei, Ma Ming, Wei Hongxiang, Zhan Wenshan
        Invention patent: ZL200510126428.1

[31] A magnetic multilayer film with linear magnetoresistance effect and its use
         Wei Hongxiang, Zhao Jing, Du Guanxiang, Wang Lei, Wang Yinjun, Han Xiufeng*
        Invention patent: ZL200510123229.5

[30] A layered integrated three-dimensional magnetic field sensor and its preparation method and use
         Wang Lei, Han Xiufeng*, Wei Hongxiang, Yang Handong, Zhai Guangjie
        Invention patent: ZL200510116757.8

[29] Linear magnetic field sensor and its manufacturing method
         Wang Lei, Han Xiufeng*, Li Feifei, Jiang Lixian, Zhang Xiequn, Zhan Wenshan
        Invention patent: ZL200510072052.0

[28] Switch-type magnetic field sensor for current overload protector
         Wang Lei, Fang Yikun, Wang Tianxing, Han Xiufeng*
        Invention patent: ZL200410090614.X

[27] Spin valve type digital magnetic field sensor and its manufacturing method
         Wang Lei, Zhao Jing, Han Yunan, Han Xiufeng*
        Invention patent: ZL200410090615.4

Spin nano-oscillator and random number generator

[26] Ultra-high frequency spin microwave oscillator based on antiferromagnetic materials
        Wei Hongxiang, Feng Jiafeng, Han Xiufeng
         Invention patent: ZL201510329435.5

[25] Spin microwave oscillator based on hard magnetic materials
        Wei Hongxiang, Feng Jiafeng, Han Xiufeng
         Invention patent: ZL201510213746.5

[24] Phase-locked loop circuit based on spin oscillator
        Wei Hongxiang, Feng Jiafeng, Han Xiufeng
         Invention patent: ZL201510964693.0

[23] Terahertz signal generator based on spin oscillator
        Wei Hongxiang, Feng Jiafeng, Han Xiufeng
         Invention patent: ZL201510983126.X

[22] Spin torque oscillator with high output power and its application
        Wei Hongxiang, Feng Jiafeng, Zhang Xiaoguang, Liu Houfang, Han Xiufeng
        Invention patent: ZL201610517955.3
        Invention patent: US10135392B2

[21] Spin microwave oscillator and spin microwave detector
         Wang Yi, Yu Guoqiang, Liu Dongping, Wen Zhenchao, Han Xiufeng
        Invention patent: ZL200810222965.X

[20] A magnetic single-layer film microwave oscillator and its manufacturing method, control method          and use
         sp; Wen Zhenchao, Wei Hongxiang, Zhang Shufeng, Han Xiufeng
          Invention patent: ZL200810119751.X

Spin resonant tunneling diode (QW-Resonant Tunnling Diode) and spin transistor (Spin transistor)

[19] Double magnetic barrier tunnel junction and spin electronics device including the same
        Han Xiufeng, Kong Wenjie, Huang Li, Wu Hao, Wan Caihua
         Invention patent: ZL201510846946.4

[18] Magnetic tunnel junction with negative differential resistance and spintronic device including the         same
        Jiang Jun, Zhang Xuan, Guo Peng, Zhang Xiaoguang, Han Xiufeng
         Invention patent: ZL201510426980.6

[17] Magnetic tunnel junction with quantum effect and spin diode and transistor containing the same
        Wen Zhenchao, Tao Bingshan, Yuan Zhonghui, Jiang Lixian, Han Xiufeng
         Invention patent: ZL201510382329.3

[16] A Spin Transistor
        Liu Dongping, Wen Zhenchao, Rehana, Shamaila, Han Xiufeng*
         Invention patent: ZL200710099739.2

[15] A MgO double-barrier magnetic tunnel junction with quantum effect and its use
        Wang Yan, Lu Zhongyi, Zhang Xiaoguang, Han Xiufeng*
         Invention patent: ZL200610080970.2

[14] Transistor based on resonant tunneling effect of double barrier tunnel junction
        Zeng Zhongming, Han Xiufeng*, Du Guanxiang, Wei Hongxiang, Li Feifei, Zhan Wenshan
         Invention patent: ZL200510064341.6

Spin field transistor

[13] Nano multilayer film, field effect tube, sensor, random accessory memory and preparation
        method
        Han Xiufeng, Liu Houfang, Syed Rizwan, Li Dalai, Guo Peng, Yu Guoqiang, Liu Dongping, Chen         Yiran
         Invention patent: US9559295B2

[12] A new type of complementary field effect transistor controlled by electric field and its logic circuit
         Han Xiufeng, Guo Peng, Chen Yiran, Liu Dongping
        Invention patent: ZL201110304805.1

[11] Nano-multilayer film, field effect transistor, sensor, random access memory and preparation method
         Han Xiufeng, Liu Houfang, Rui Zhiwan
        Invention patent: ZL201110304804.7

[10] A spin field effect transistor and its magnetic memory
         Han Xiufeng*, Yu Guoqiang, Wang Wenxiu, Luo Jun, Zhang Xiaoguang
        Invention patent: ZL 201010227339.7

Novel organic, superconductor and oxide hybrid-spintronic materials and devices

[9]A composite semiconductor layer
        Guo Peng, Liu Dongping, Han Xiufeng
         Invention patent: ZL201210535419.8

[8] Core composite film for magnetic/non-magnetic/magnetic multilayer film and its use
        Wang Tianxing, Zeng Zhongming, Du Guanxiang, Han Xiufeng*, Hong Zhenmin, Shi Gaoquan
        Invention patent: ZL200510056941.8
        Invention patent: Patent No. 4880669

Magnetic Skyrmions and Magnetic Nanowires and Nanotubes, etc.

[7] A Magnetic Multilayer Film Based on Magnetic Skyrmion Layer
        Li Dalai, Wang Shouguo, Tao Bingshan, Han Xiufeng
         Invention patent: ZL201310311148.2

[6] A method for preparing coaxial nanocables
         Shi Dawei, Han Xiufeng
         Invention patent: ZL201210455309.0

Nano patterned and magneto-electric characteristic measurement system (EBL Nano patterned and magneto-electric characteristic measurement system)

[5] Nano-patterned system and magnetic-field applying device thereof
         Yu Guoqiang, Guo Peng, Han Xiufeng, Guo Zhaohui, Sun Xiaoyu, Zhou Xiangqian
         Invention patent: EP2835688B1
         Invention patent: US9640363B2
         Invention patent: US9484138B2

[4]A nano-patterning system and its light response characteristic detection device
         Liu Pan, Guo Peng, Yu Guoqiang, Han Xiufeng, Sun Xiaoyu, Zhou Xiangqian
         Invention patent: ZL201210231008.X
         Invention patent: ZL201210231008.X

[3] Nano-patterning and ultra-wideband magnetoelectric property measurement system
        Han Xiufeng, Ma Qinli, Yu Guoqiang, Liu Houfang, Yu Tian, Zhou Xiangqian, Ai Jinhu, Sun          Xiaoyu
         Invention patent: ZL201110209908.X
         Invention patent: EP2738607B1
         Invention patent: JP 5964959 B2

[2] A nanopatterning system and its magnetic field application device
         Yu Guoqiang, Guo Peng, Han Xiufeng, Guo Zhaohui, Sun Xiaoyu, Zhou Xiangqian
         Invention patent: ZL201210096470.3
         Invention patent: US 9,484,138 B2
        Invention patent: US 9,640,363 B2
         Invention patent: 12873678.2

Experimental equipment and key components design

[1] Vacuum infrared heating annealing furnace
        Liu Houfang, Yin Lin, Liu Jinsheng, Han Xiufeng
         Invention patent: ZL201010139658.2

地址：北京市海淀区中关村南三街8号中国科学院物理研究所M02组邮编100190 电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn