Latest researches：
Skomingon-superconducting vortex pairs in chiral-magnet-superconductor heterojunction
Electrical switching of the perpendicular Néel order in a collinear antiferromagnet
Restricted Boltzmann Machines Implemented by Spin−Orbit Torque Magnetic Tunnel Junctions
Probability-distribution-configurable true random number generators based on apin-orbit torque magnetic tunnel junctions
Voltage-controlled magnon transistor via tuning interfacial exchange coupling
Field-free spin-orbit torque switching enabled by the interlayer Dzyaloshinskii-Moriya interaction.
Switching perpendicular magnetization of a magnetic insulator by magnon transfer torque
Magnonic skin effect and magnon valve effect in an antiferromagnetically coupled heterojunction
Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination
High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2
Introduction of the group：
The M02 Research Group is affiliated with the State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, and was established in 2002. The group is dedicated to the research on "spintronic materials, physics, and devices," achieving a series of internationally advanced research progress. It has constructed and developed more than ten types of new spintronic and magnonic prototype devices; it was the first to discover and experimentally observe ten novel spin quantum effects and magnon quantum effects; published over 400 related academic papers, and obtained 110 patent authorizations. The main research directions include (1) research on new magnetic materials, physics, and devices; (2) research on spintronic materials, physics, and devices related to new magnetic heterojunctions and magnetic tunnel junctions; (3) research on new spintronic prototype devices such as magnetic random access memory, spin logic, spin nano-oscillators, spin microwave detectors, spin random number generators, spin resonant tunneling diodes, spin light-emitting diodes, spin transistors, spin field effect transistors, magnetoresistive magnetic sensors, magnon valves and magnon junctions, and magnon transistors; (4) first-principles calculations based on magnetic heterojunctions and magnetic tunnel junctions.
Address: Beijing National Laboratory for Condensed Matter Physics No.8, 3rd South Street, Zhongguancun, Haidian District, Beijing 100190, China Code: 100190 Tel：+86-10-82649268 Fax：+86-10-82649485 Email：xfhan@iphy.ac.cn