Prof. X. F. Han
Career History：
He graduated from Physics Department of Lanzhou University in 1984 and received a doctorate degree in Jilin University in 1993. He is currently a researcher and doctoral supervisor of Physics Institute of Chinese Academy of Sciences. From 1998 to 2002, he was engaged in spin electronics research in Northeast University of Japan, University of New Orleans and St. Sany college in Ireland. In 2003, he was funded by the national fund for outstanding youth; In 2007, he was funded by the innovation research group fund of the National Fund Commission; In 2007, he was selected as "national candidate for the new century talents project of one billion". Presided over and completed many international cooperation and exchange funds, such as China love, China, Britain, China France, China, Japan, China Australia, China and Russia, major science and technology research and development and "nano plan" projects and major international cooperation research projects of the Ministry of science and technology. Published more than 360 relevant academic papers; More than 100 patents have been granted; More than 70 reports were invited by international conferences; He was the editor in chief of the introduction to spintronics and participated in writing four monographs, such as Handbook of spintronics. He is currently the editor of the International Journal jmmm, spin, sensor, scientific bulletin and physics.The main research fields are spin electronics materials, physics and devices. More than 10 new types of magnetic heterojunction and magnetic tunnel junction materials have been constructed and prepared. Eight novel spin quantum effects have been found or observed, such as the QW TMR effect based on quantum well state, CBMR effect, MVE effect, MJE effect, MBE, MSE, MECD effect, and the effect of current drag (MeCD) based on quantum well state And the effect of the nonlocal spin Hall magnetoresistance (mnsmr) with magneton as the medium. More than 10 new spin electronics devices have been developed, including: new nano ring and STT MRAM prototype device, nano ring spin oscillator, nano ring spin microwave detector, nano ring spin random digital generator, non-volatile multi-energy programmable sot spin logic and sot spin memory, spin resonance tunneling diode based on quantum well state Spin led and other prototype devices; The invention relates to a pilot device of TMR magnetoresistance magnetic sensor; A new type of magneton valve, magneton junction, magneton transistor and magneton generator are described. Among them, the basic research on new type of nano ring magnetic random access memory won the first prize of science and technology of Beijing in 2013; "Outstanding progress in magnetic and magnetic materials and their application research" won the 2018 Asian magnetic alliance Award (AuMS award 2018).
At present, the research topics and directions are: (1) research on new type of magnetonic materials, physics and devices;(2) Materials, physics and devices research based on magnetic tunnel junction and tunneling magnetoresistance (TMR) effect;(3) Magnetic nano heterostructures and their spin Hall effect and spin Seebeck effect;(4) Ferromagnetic/multiferroic/semiconductor composite magnetic tunnel junctions and spin transport properties;(5) new type magnetic random access memory (MRAM), magnetoresistive magnetic sensor, spin logic, spin nanooscillator, spin microwave detector, spin random digital generator, spin resonant tunneling diode, spin field diode, spin transistor and spin field effect transistor;(6) First principles calculations of novel magnetic nano heterostructures and magnetic tunnel junctions.
50 doctoral graduates have been trained (including 9 overseas doctoral graduates); There are 10 graduate students who are studying for master's degree and doctoral degree, and 1 foreign doctoral student; There are 4 outgoing postdoctors and 1 in station postdoctors. In 2007, 2008 and 2017, he won the "excellent tutor award of Chinese Academy of Sciences" three times.
Address: Beijing National Laboratory for Condensed Matter Physics No.8, 3rd South Street, Zhongguancun, Haidian District, Beijing 100190, China Code: 100190 Tel：+86-10-82649268 Fax：+86-10-82649485 Email：xfhan@iphy.ac.cn