index | members | directions | equipments | publications | patents | news | ||||||||||
Jiafeng Feng Personal Introduction associate researcher of the Institute of physics, Chinese Academy of Sciences, and a university teacher of the Chinese Academy of Sciences. He graduated from the Department of physics of Anhui University in 2002 and obtained his doctorate in the Institute of physics, Chinese Academy of Sciences in 2007. He was engaged in scientific research at Trinity College in Ireland from 2007 to 2011 and spintec research center in France from 2011 to 2013. Member of the youth innovation promotion association of Chinese Academy of Sciences in 2017 Jiafeng Feng is mainly engaged in the research work of "Fundamentals and applications of spintronic materials and physics", and is engaged in magnetic random access memory (MRAM), magnetic sensors and spin torque nano oscillators, Some achievements have been made in the optimization of materials and structures, fabrication of micro nano fabrication, characterization of physical properties and basic development of related devices. He has published more than 90 papers in SCI journals, including physical review letters, nature communications, nano letters, advanced materials, science advances, physical review applied, applied physics letters and other academic journals, and he cited nearly 600 times. More than 10 invention patents have been authorized in China and the United States. As one of the participants, he won the first and third prizes of Beijing Science and Technology Award in 2013 and 2017 respectively.Unit and title Associate researcher, State Key Laboratory of magnetism, Institute of physics, Chinese Academy of Sciences Research experience Educational experience Major academic positions Representative Papers(* is corresponding author) [1] High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2Hongjun Xu, Jinwu Wei, Hengan Zhou, Jiafeng Feng, Teng Xu, Haifeng Du, Congli He, Yuan Huang, Junwei Zhang, Yizhou Liu, Han-Chun Wu, Chenyang Guo, Xiao Wang, Yao Guang, Hongxiang Wei, Yong Peng, Wanjun Jiang, Guoqiang Yu, and Xiufeng Advanced Materials 2020, 2000513 (2020) [2] Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination Yao Guang, Iuliia Bykova, Yizhou Liu, Guoqiang Yu, Eberhard Goering, Markus Weigand, Joachim Gräfe, Se Kwon Kim, Junwei Zhang, Hong Zhang, Zhengren Yan, Caihua Wan, Jiafeng Feng, Xiao Wang, Chenyang Guo, Hongxiang Wei, Yong Peng, Yaroslav Tserkovnyak, Xiufeng Han and Gisela Schütz Nature Communications 11:949 (2020) [3] Coherent Resonant Tunneling through Double Metallic Quantum Well States Bingshan Tao, Caihua Wan, Ping Tang, Jiafeng Feng, Hongxiang Wei, Xiao Wang, Stéphane Andrieu, Hongxin Yang, Mairbek Chshiev, Xavier Devaux, Thomas Hauet, François Montaigne, Stéphane Mangin, Michel Hehn, Daniel Lacour, Xiufeng Han, and Yuan Lu Nano Letters 19, 3019−3026 (2019) [4] Strategy for Fabricating Wafer-Scale Platinum Disulfide Hongjun Xu, Hsin-Pan Huang, HaiFeng Fei, Jiafeng Feng, Huei-Ru Fuh, Jiung Cho, Miri Choi, Yanhui Chen, Lei Zhang, Dengyun Chen, Duan Zhang, Cormac Ó Coileáin, Xiufeng Han, Ching-Ray Chang and Han-Chun Wu ACS Applied Materials & Interfaces 11, 8202-8209 (2019) [5] Anatomy of Skyrmionic Textures in Magnetic Multilayers Wenjing Li, Iuliia Bykova, Shilei Zhang, Guoqiang Yu, Riccardo Tomasello, Mario Carpentieri, Yizhou Liu, Yao Guang, Joachim Gräfe, Markus Weigand, David M. Burn, Gerrit van der Laan, Thorsten Hesjedal, Zhengren Yan, Jiafeng Feng, Caihua Wan, Jinwu Wei, Xiao Wang, Xiaomin Zhang, Hongjun Xu, Chenyang Guo, Hongxiang Wei, Giovanni Finocchio, Xiufeng Han, and Gisela Schütz Advanced Materials 2019, 1807683 (2019) [6] Spin-orbit torque switching in perpendicular Y3Fe5O12/Pt bilayer. C. Y. Guo, C. H. Wan, M. K. Zhao, H. Wu, C. Fang, Z. R. Yan, J. F. Feng, H. F. Liu, and X. F. Han Applied Physical Letters 114, 192409 (2019) [7] Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2 Xiao Wang, Jian Tang, Xiuxin Xia, Congli He, Junwei Zhang, Yizhou Liu, Caihua Wan, Chi Fang, Chenyang Guo, Wenlong Yang, Yao Guang, Xiaomin Zhang, Hongjun Xu, Jinwu Wei, Mengzhou Liao, Xiaobo Lu, Jiafeng Feng, Xiaoxi Li, Yong Peng, Hongxiang Wei, Rong Yang, Dongxia Shi, Xixiang Zhang, Zheng Han, Zhidong Zhang, Guangyu Zhang, Guoqiang Yu, Xiufeng Han Science Advances 5, eaaw8904 (2019) [8] Temperature dependence of shot noise in double barrier magnetic tunnel junctions Jiasen Niu, Liang Liu, J. F. Feng, X. F. Han, J. M. D. Coey, X.-G. Zhang, and Jian Wei Physical Review B 97, 104412 (2018) [9] Magnon Valve Effect between Two Magnetic Insulators H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H. X. Wei, and X. F. Han Physical Review Letters 120, 097205 (2018) [10] Threshold Magnetoresistance in Anistropic Magnetic 2D Transition Metal Dichalcogenides Hongjun Xu, Ming-Chien Hsu, Huei-Ru Fuh, Jiafeng Feng, Xiufeng Han, Yanfeng Zhao, Duan Zhang, Xinming Wang, Fang Liu, Huajun Liu, Jiung Cho, Miri Choi, Byong Sun Chun, Cormac Ó Coileáin, Zhi Wang, Mansoor B. A. Jalil, Han-Chun Wu and Ching-Ray Chang J. Mater. Chem. C 2018, DOI: 10.1039/C7TC05769E [11] Giant Perpendicular Exchange Bias in a Subnanometer Inverted (Co/Pt)n/Co/IrMn Structure Jiafeng Feng, H. F. Liu, H. X. Wei, X.-G. Zhang, Yong Ren, Xinxi Li, Yan Wang, J. P. Wang, and X. F. Han, Physical Review Applied 7, 054005 (2017) [12] Tunneling anisotropic magnetoresistance driven by magnetic phase transition X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, and F. Pan Nature Communications 8, 449 (2017); DOI: 10.1038/s41467-017-00290-4 [13] Spin-flip noise due to nonequilibrium spin accumulation Liang Liu, Jiasen Niu, Huiqiang Guo, Jian Wei*,D.-L. Li, J.-F. Feng*, X.-F. Han, J. M. D. Coey, and X.-G. Zhang Physical Review B 93, 180401(R) (2016) [14] Temperature dependence of microwave oscillation in magnetic tunnel junctions with a perpendicular CoFeB free layer. Peng Guo, J. F. Feng*, H. X. Wei*, X. F. Han, B. Fang, B.S. Zhang, and Z. M. Zeng Applied Physics letters 106, 012402 (2015) [15] Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control Houfang Liu, Ran Wang, Peng Guo, Zhenchao Wen, Jiafeng Feng, et al. Scientific Reports 5,18269 (2015) [16] Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly Liang Liu, Jiasen Niu, Li Xiang,Jian Wei*, D. L. Li, J. F. Feng*, and X. F. Han, X.-G. Zhang, J. M. D. Coey Physical Review B 90, 195132 (2014) [17] Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction B . S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han, Y. Liu, Y. G. Zhao, Q. Zhang, Z. B. Guo, and X. X. Zhang Applied Physics letters 105, 102407 (2014) [18] Origin of ferromagnetism in aluminum-doped TiO2 thin films: Theory and experiments Xianjie Wang, Yongli Song, L. L. Tao, J. F. Feng, Yu Sui, Jinke Tang, Bo Song, Yi Wang, Yang Wang, Yu Zhang, and X. F. Han Applied Physics letters 105, 262402 (2014) |
||||||||||||||||
Address: Beijing National Laboratory for Condensed Matter Physics No.8, 3rd South Street, Zhongguancun, Haidian District, Beijing 100190, China Code: 100190 Tel:+86-10-82649268 Fax:+86-10-82649485 Email:xfhan@iphy.ac.cn |