Caihua Wan
Personal Introduction
He is currently an associate researcher of the Institute of physics, Chinese Academy of Sciences. He graduated from Zhejiang University in 2007, obtained his doctorate from Tsinghua University in 2012, and engaged in post doctoral research in the Institute of physics of Chinese Academy of Sciences from 2012 to 2016, and has been a research assistant and assistant research fellow of Institute of physics of Chinese Academy of Sciences since 2016. He is mainly engaged in the research of spintronics. His research interests are mainly focused on the condensed state magnetism such as spin orbit electronics, Magnetoelectronics and spin thermoelectronics, and the research and development fields of spin electronic devices such as magnetic random access memory and spin logic. He has been engaged in the research and development of nature, nature electronics, nature communications, science advances, Phys. Rev. Lett., advanced Materials、Nano Letters、Phys. Rev. B、Phys. Rev. Appl.、Appl. Phys.Lett . more than 70 SCI papers have been published in journals such as advanced electronic materials, 4 Chinese invention patents have been applied for and obtained, 1 American invention patent has been authorized, and the project support of youth innovation promotion association of Chinese Academy of Sciences has been obtained. It has undertaken two NSFC projects and participated in two national key R & D projects of the Ministry of science and technology with the backbone of the projects.Education
- From June 2016 to present: associate researcher, State Key Laboratory of magnetism, Institute of physics, Chinese Academy of Sciences
- 2012.7-2016.6: group M02, Institute of physics, Chinese Academy of Sciences, postdoctoral, CO Supervisor: researcher Han Xiufeng
- 2007.9-2012.7: Department of materials science and engineering, Tsinghua University, Ph.D., supervisor: Professor Zhang Xiaozhong
- 2003.9-2007.7: Department of materials science and engineering, Zhejiang University, bachelor's degree
Research direction
- Spin orbit Electronics: spin orbit moment effect and magnetic random access memory and spin logic devices
- Magnonics: magneton valve, magneton junction, magneton drag effect, spin pump effect, etc
- Hot spintronics: spin Seebeck effect, anomalous Nernst effect, spin dependent Seebeck effect
- Semiconductor spintronics: spin injection, nonlocal spin valve and spin transistor, etc
Professional Experience and Skills
- Film deposition techniques: magnetron sputtering and pulsed laser deposition
- Micromachining technology: ultraviolet exposure and electron beam exposure
- Electromagnetic measurement technology: DC and AC phase locked transport measurement, VSM magnetic measurement
- Electron microscopy characterization techniques: high resolution transmission electron microscopy, scanning electron microscopy and corresponding data processing methods
Representative works
Spin-orbit torque switching in a T-type magnetic configuration with current orthogonal to easy,
Nature Communications, 2019,10: 233.
[2] X. Wang#; C. H. Wan#; W. J. Kong; X. Zhang; Y. W. Xing; C. Fang; B. S. Tao; W. L. Yang; L. Huang;
H. Wu; M. Irfan; X. F. Han*;
Field-free programmable spin logics via chirality-reversible spin-orbit torque ,
Advanced Materials, 2018, 30: 1801318.
[3] C. H. Wan#; X. Zhang#; Z. H. Yuan; C. Fang; W. J. Kong; Q. T. Zhang; H. Wu; U. Khan; X. F. Han*;
Programmable spin logic based on spin Hall effect in a single device,
Advanced Electronic Materials, 2017, 3: 1600282.
[4] X. Zhang; C. H. Wan*; Z. H. Yuan; Q. T. Zhang; H. Wu; L. Huang; W. J. Kong; C. Fang; U. Khan; X. F. Han*;
Electrical control over perpendicular magnetization switching driven by spin-orbit torques,
Physical Review B, 2016, 94: 174434.
[5] W. J. Kong; Y. R. Ji; X. Zhang; H. Wu; Q. T. Zhang; Z. H. Yuan; C. H. Wan*; X. F. Han*; T. Yu; K. Fukuda;
H. Naganuma; M.-J. Tung;
Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system,
Applied Physics Letters, 2016, 109: 132402.
Other published papers
[1] C. Y. Guo#; C. H. Wan#; W. Q. He; M. K. Zhao; Z. R. Yan; Y. W. Xing; X. Wang; P. Tang; Y. Z. Liu;
S. Zhang; Y. W. Liu; X. F. Han*;
A nonlocal spin Hall magnetoresistance in a platinum layer deposited on a magnon junction,
Nature Electronics, 2020, 3: 304-308.
[2] W. J. Kong#; C. H. Wan#; C. Y. Guo; C. Fang; B. S. Tao; X. Wang; X. F. Han*;
All-electrical manipulation of magnetization in magnetic tunnel junction via spin-orbit torque,
Applied Physics Letters, 2020, 116: 162401.
[3] S. Tu#; T. Ziman#; G. Q. Yu#; C. H. Wan#; J. F. Hu#; H. Wu#; H. C. Wang; M. C. Liu; C. P. Liu; C. Y. Guo; J. Y. Zhang;
M. Cabero; Y. G. Zhang; P. Gao; S. Liu; D. P. Yu; X. F. Han; I. Hallsteinsen; D. Gilbert;
P. Woelfle; K. Wang; J.-P. Ansermet;S. Maekawa; H. M. Yu;
Record thermopower found in an IrMn-based spintronic stack,
Nature Communications, 2020, 11: 2023.
[4] W. Z. Chen; L. N. Jiang; Z. R. Yan; Y. Zhu; C. H. Wan; X. F. Han*;
Origin of large voltage-controlled magnetic anisotropy in Cr/Fe/MgO junction with ultrathin Fe Layer: first-principles investigation,
Physical Review B, 2020, 101: 144434.
[5] 万蔡华;《低维磁性材料》之第七章《自旋电子学》, 北京: 科学出版社, 2020.
[6] T. Y. Ma#; C. H. Wan#; X. Wang; W. L. Yang; C. Y. Guo; C. Fang; M. K. Zhao; J. Dong; Y. Zhang; X. F. Han*;
Evidence of magnetization switching by anomalous spin Hall torque in NiFe,
Physical Review B, 2020, 101: 134417.
[7] W. L. Yang#; C. H. Wan#; Z. R. Yan; X. Zhang; M. E. Stebliy; X. Wang; C. Fang; C. Y. Guo; Y. W. Xing; T. Y. Ma; A. V. Ognev; A. S. Samardak; M.-J. Tung; G. Q. Yu; X. F. Han*;
Chirality-reversible multistate switching via two orthogonal spin-orbit torques in a perpendicularly magnetized,
Physical Review Applied, 2020, 13: 024052.
[8] X. C. Liu; N. Tang*; C. Fang; C. H. Wan*; S. X. Zhang; X. Y. Zhang; H. M. Guan; Y. F. Zhang; X. Qian; Y. Ji; W. K. Ge; X. F. Han; B. Shen;
Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors,
RSC Advances, 2020, 10: 12547-12553.
[9] X. Wang; C. H. Wan; Y. Z. Liu; Q. M. Shao; H. Wu; C. Y. Guo; C. Fang; Y. Guang; W. L. Yang; C. L. He; B. S. Tao;
X. M. Zhang; T. Y. Ma; J. Dong;
Y. Zhang; J. F. Feng; J. Xiao; K. L. Wang; G. Q. Yu*; X. F. Han;
Spin transmission in IrMn through measurements of spin Hall magnetoresistance and spin-orbit torque,
Physical Review B, 2020, 101: 144412.
[10] W. L. Yang#; J. W. Wei#; C. H. Wan; Y. W. Xing; Z. R. Yan; X. Wang; C. Fang; C. Y. Guo; G. Q. Yu; X. F. Han*;
Determining spin-torque efficiency in ferromagnetic metals via spin-torque ferromagnetic,
Physical Review B, 2020, 101: 064412.
[11] P. Liu; L. N. Jiang; W. Z. Chen; X. M. Zhang; W. L. Yang; C. H. Wan*;
Voltage controllable Pt/Co/AlOx superparamagnetic,
Journal of Magnetism & Magnetic Materials, 2020, 497: 166006.
[12] J. W. Wei; C. L. He; X. Wang; H. J. Xu; Y. Z. Liu; Y. Guang; C. H. Wan; J. F. Feng; G. Q. Yu*; X. F. Han;
Characterization of Spin-Orbit Torque Efficiency in Magnetic Heterostructures with Perpendicular Magnetic Anisotropy via Spin-Torque Ferromagnetic Resonance,
Physical Review Applied, 2020, 13: 034041.
[13] Y. Guang; I. Bykova; Y. Z. Liu; G. Q. Yu*; E. Goering; M. Weigand; J. Graefe; S. K. Kim; J. W. Zhang; H. Zhang; Z. R. Yan;
C. H. Wan; J. F. Feng; X. Wang; C. Y. Guo; H. X. Wei; P. Yong; Y. Tserkovnyak; X. F. Han; G. Schuetz;
Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination,
Nature Communications, 2020, 11: 949.
[14] C. Y. Guo#; C. H. Wan#; M. K. Zhao; H. Wu; C. Fang; Z. R. Yan; J. F. Feng; H. F. Liu; X. F. Han*;
Spin-orbit torque switching in perpendicular Y3Fe5O12/Pt bilayer,
Applied Physics Letters, 2019, 114: 192409.
[15] C. Fang#; C. H. Wan#; C. Y. Guo; C. Feng; X. Wang; Y. W. Xing; M. K. Zhao; J. Dong; G. Q. Yu; Y. G. Zhao; X. F. Han*;
Observation of large anomalous Nernst effect in 2D layered materials Fe3GeTe2,
Applied Physics Letters, 2019,115: 212402.
[16] B. S. Tao; C. H. Wan; P. Tang; J. F. Feng; H. X. Wei; X. Wang; S. Andrieu; H. X. Yang; M. Chshiev; X. Devaux;
T. Hauet; F. Montaigne; S. Mangin; M. Hehn; D. Lacour; X. F. Han*; Y. Lu*; Coherent resonant tunneling through double metallic quantum well states,
Nano Letters, 2019,19: 3019-3026.
[17] J. Y. Qin; X. Wang; T. Qu; C. H. Wan; L. Huang; C. Y. Guo; T. Yu; H. X. Wei; X. F. Han*;
Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel,
Applied Physics Letters, 2019,114: 112401.
[18] X. Wang; J. Tang; X. X. Xia; C. L. He; J. W. Zhang; Y. Z. Liu; C. H. Wan; C. Fang; C. Y. Guo; W. L. Yang; Y. Guang;
X. M. Zhang;
H. J. Xu; J. W. Wei; M. Z. Liao; X. B. Lu; J. F. Feng; X. X. Li; Y. Peng; H. X. Wei; R. Yang; D. X. Shi; X. X. Zhang; Z, Han*;
Z. D. Zhang; G. Y. Zhang*; G. Q. Yu*; X. F. Han; Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2,
Science Advances, 2019, 5: eaaw8904.
[19] J. G. Li; Z. M. Jin*; B. J. Song; S. N. Zhang; C. Y. Guo; C. H. Wan; X. F. Han; Z. X. Cheng; C. Zhang; X. Lin; G. H. Ma;
J. Q. Yao; Magnetic-field-free terahertz emission from a magnetic tunneling,
Japanese Journal of Applied Physics, 2019, 58: 090913.
[20] W. J. Li; I. Bykova; S. L. Zhang; G. Q. Yu*; R. Tomasello; M. Carpentieri; Y. Z. Liu; Y. Guang; J. Graefe; M. Weigand;
D. M. Burn; G. van der Laan; T. Hesjedal; Z. R. Yan; J. F. Feng; C. H. Wan; J. W. Wei; X. Wang; X. M. Zhang; H. J. Xu;
C. Y. Guo; H. X. Wei;G. Finocchio*; X. F. Han; G. Schuetz; Anatomy of Skyrmionic Textures in Magnetic Multilayers,
Advanced Materials, 2019, 31: 1807683.
[21] C. Y. Guo#; C. H. Wan#; X. Wang; C. Fang; P. Tang; W. J. Kong; M. K. Zhao; L. N. Jiang; B. S. Tao; G. Q. Yu; X. F. Han*;
Magnon valves based on YIG/NiO/YIG all-insulating magnon junctions,
Physical Review B, 2018, 98: 134426.
[22] L. Huang; H. Wu; P. Liu; X. M. Zhang; B. S. Tao; C. H. Wan*; Y. Yan; X. F. Han;
Room temperature spin injection into SiC via Schottky barrier,
Applied Physics Letters, 2018, 113: 222402.
[23] W. J. Kong; C. H. Wan; B. S. Tao; C. Fang; L. Huang; C. Y. Guo; M. Irfan; X. F. Han*;
Study of spin-orbit torque induced magnetization switching in synthetic antiferromagnet with ultrathin Ta spacer,
Applied Physics Letters, 2018, 113: 162402.
[24] H. Wu; L. Huang; C. Fang; B. S. Yang; C. H. Wan; G. Q. Yu; J. F. Feng; H. X. Wei; X. F. Han*;
Magnon Valve Effect between Two Magnetic,
Physical Review Letters, 2018, 120: 097205.
[25] J. Y. Qin; X. Chen; T. Yu; X. Wang; C. Y. Guo; C. H. Wan; J. F. Feng; H. X. Wei; Y. W. Liu; X. F. Han*;
Microwave spin-torque-induced magnetic resonance in a nanoring-shape-confined magnetic tunnel junction,
Physical Review Applied, 2018,10: 044067.
[26] B. S. Tao; L. N. Jiang; W. J. Kong; W. Z. Chen; B. S. Yang; X. Wang; C. H. Wan; H. X. Wei; M. Hehn; D. Lacour;
Y. Lu; X. F. Han*;
Tunneling anisotropic magnetoresistance in fully epitaxial magnetic tunnel junctions with different barriers,
Applied Physics Letters, 2018, 112: 242404.
[27] 韩秀峰*;万蔡华;
一种数据非易失性、多功能和可编程的自旋逻辑研究进展,
Acta Physica Sinica, 2018, 12: 157-164.
[28] 李文静; 光耀; 于国强*;万蔡华; 丰家峰; 韩秀峰;
薄膜异质结中磁性斯格明子的相关研究,
Acta Physica Sinica, 2018, 13: 76-86.
[29] C. Fang; C. H. Wan*; B. S. Yang; J. Y. Qin; B. S. Tao; H. Wu; X. Zhang; X. F. Han*; A. Hoffmann; X. M. Liu; Z. M. Jin;
Determination of spin relaxation times in heavy metals via second-harmonic spin injection magnetoresistance,
Physical Review B, 2017, 96: 134421.
[30] X. Zhang; C. H. Wan*; Z. H. Yuan; C. Fang; W. J. Kong; H. Wu; Q. T. Zhang; B. S. Tao; X. F. Han*;
Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect,
Journal of Magnetism and Magnetic Materials, 2017, 428: L401-L405.
[31] X. M. Zhang; C. H. Wan*; H. Wu; P. Tang; Z. H. Yuan; Q. T. Zhang; X. Zhang; B. S. Tao; C. Fang; X. F. Han*;
Magneto-Seebeck effect in spin valves,
Journal of Applied Physics, 2017, 122: 145105.
[32] G. Y. Shi; C. H. Wan; Y. S. Chang; F. Li; X. J. Zhou; P. X. Zhang; X. F. Han; J. W. Cai*; F. Pan; C. Song*;
Spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling,
Physical Review B, 2017, 95: 104435.
[33] X. Luo; C. Fang; C. H. Wan; J. L. Cai; Y. Liu; X. F. Han; Z. H. Lu; R. Xiong; Z. M. Zeng*;
Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes,
Nanotechnology, 2017, 28: 145704.
[34] R. Sagar; M. Galluzzi; C. H. Wan; K. Shehzad; S. T. Navale; T. Anwar; R. S. Mane; H.-G. Piao; A. Ali; F. J. Stadler*;
Large, linear, and tunable positive magnetoresistance of mechanically stable graphene foam-toward high-performance magnetic field,
ACS Applied Materials & Interfaces, 2017, 9: 1891-1898.
[35] L. Huang; Z. H. Yuan; B. S. Tao; C. H. Wan; P. Guo; Q. T. Zhang; L. Yin; J. F. Feng; T. Nakano; H. Naganuma;
H. F. Liu; Y. Yan; X. F. Han*;
Noise suppression and sensitivity manipulation of magnetic tunnel junction sensors with soft magnetic
Co70.5Fe4.5Si15B10 layer,
Journal of Applied Physics, 2017, 122: 113903.
[36] K. Y. Ning; H. F. Liu*; Z. Y. Ju; C. Fang; C. H. Wan; J. L. Cheng; X. Liu; L. S. Li; J. F. Feng; H. X. Wei; X. F. Han;
Y. Yang; T.-L. Ren;
Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular,
AIP Advances, 2017, 7: 015035.
[37] H. Wu; X. Wang; L. Huang; J. Y. Qin; C. Fang; X. Zhang; C. H. Wan; X. F. Han*;
Separation of inverse spin Hall effect and anomalous Nernst effect in ferromagnetic metals,
Journal of Magnetism & Magnetic Materials, 2017, 441: 149-153.
[38] M. Irfan; C. J. Wang; U. Khan; W. J. Li; X. M. Zhang; W. J. Kong; P. Liu; C. H. Wan; Y. W. Liu; X. F. Han*;
Controllable synthesis of ferromagnetic-antiferromagnetic core-shell NWs with tunable magnetic properties,
Nanoscale, 2017, 9: 5694-5700.
[39] C. Fang; C. H. Wan*; Z. H. Yuan; L. Huang; X. Zhang; H. Wu; Q. T. Zhang; X. F. Han*;
Scaling relation between anomalous Nernst and Hall effect in [Pt/Co](n) multilayers,
Physical Review B, 2016, 93: 054420.
[40] H. Wu; C. H. Wan; X. Zhang; Z. H. Yuan; Q. T. Zhang; J. Y. Qin; H. X. Wei; X. F. Han*; S. Zhang*;
Observation of magnon-mediated electric current drag at room temperature,
Physical Review B, 2016, 93: 060403.
[41] Y. N. Yan; C. H. Wan; X. J. Zhou; G. Y. Shi; B. Cui; J. H. Han; Y. H. Fan; X. F. Han; K. L. Wang; F. Pan; C. Song*;
Strong electrical manipulation of spin-orbit torque in ferromagnetic,
Advanced Electronic Materials, 2016, 2: 1600219.
[42] H. Wu; X. Zhang; C. H. Wan; B. S. Tao; L. Huang; W. J. Kong; X. F. Han*;
Hanle magnetoresistance: The role of edge spin accumulation and interfacial spin current,
Physical Review B, 2016, 94: 174407.
[43] Q. T. Zhang; P. Murray; L. You; C. H. Wan; X. Zhang; W. J. Li; U. Khan; J. L. Wang; K. Liu*; X. F. Han*;
Magnetic fingerprint of interfacial coupling between CoFe and nanoscale ferroelectric domain,
Applied Physics Letters, 2016,109: 082906.
[44] Z. H. Yuan; J. F. Feng; P. Guo; C. H. Wan; H. X. Wei; S. S. Ali; X. F. Han*; T. Nakano; H. Naganuma; Y. Ando*;
Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer,
Journal of Magnetism and Magnetic Materials, 2016, 398: 215-219.
[45] U. Khan; W. J. Li; N. Adeela; M. Irfan; K. Javed; C. H. Wan; S. Riaz; X. F. Han*;
Magnetic response of hybrid ferromagnetic and antiferromagnetic core-shell nanostructures,
Nanoscale, 2016, 8: 6064-6070.
[46] U. Khan*; N. Adeela; C. H. Wan; M. Irfan; S. Naseem; S. Riaz; M. Iqbal; X. F. Han;
Response of iron oxide on hetero-nanostructures of soft and hard ferrites,
Superlattices and Microstructures, 2016, 92: 374-379.
[47] 万蔡华; 韩秀峰 译;
寻找磁单极子,
物理, 2016,10: 670-671.
[48] H. Wu; C. H. Wan*; Z. H. Yuan; X. Zhang; J. Jiang; Q. T. Zhang; Z. C. Wen; X. F. Han*;
Observation of pure inverse spin Hall effect in ferromagnetic metals via ferromagnetic/antiferromagnetic exchange-bias,
Physical Review B, 2015, 92: 054404.
[49] P. Liu; Z. H. Yuan; H. Wu; S. S. Ali; C. H. Wan*; S. L. Ban;
Nonlocal ordinary magnetoresistance in indium arsenide,
Journal of Magnetism & Magnetic Materials, 2015, 385: 292-294.
[50] Q. T. Zhang; L. You; X. Shen; C. H. Wan; Z. H. Yuan; X. Zhang; L. Huang; W. J. Kong; H. Wu; R. C. Yu; J. Wang*;
X. F. Han*;
Polarization-mediated thermal stability of metal/oxide heterointerface,
Advanced Materials, 2015, 27: 6934.
[51] H. Wu; Q. T. Zhang; C. H. Wan; S. S. Ali; Z. H. Yuan; L. You; J. Wang; Y. Choi; X. F. Han*;
Spin Hall magnetoresistance in CoFe2O4/Pt films,
IEEE Transactions on Magnetics, 2015, 51: 4100104.
[52] Q. T. Zhang; L. You; C. H. Wan; Z. H. Yuan; X. Zhang; J. Wang; X. F. Han*;
Influence of epitaxial BiFeO3 on superparamagnetic behavior of CoFeB thin film,
Journal of Applied Physics, 2015, 117: 143904.
[53] W. W. Feng*; X. Fu; C. H. Wan; Z. H. Yuan; X. F. Han*; N. V. Quang; S. Cho*;
Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application,
Physica Status Solidi-Rapid Research Letters, 2015, 9: 641-645.
[54] L. B. Mo; Y. Wang; Y. Bai; Q. Y. Xiang; Q. Li; Q. Q. Yao; J. O. Wang; K. Ibrahim; H.-H. Wang; C. H. Wan; J. L. Cao*;
Hydrogen impurity defects in rutile TiO2,
Scientific Reports, 2015, 5: 17634.
[55] J. M. Wang; X. Z. Zhang*; C. H. Wan; J. Vanacken; Z. C. Luo; C. Y. Xiong; V. V. Moshchalkov;
Magnetoresistance sign change in iron-doped amorphous carbon films at low temperatures,
Journal of Physics D: Applied Physics, 2014, 47: 215002.
[56] 万蔡华; 韩秀峰*;
《自旋电子学导论》之第十一章《各种霍尔效应及其输运性质和应用》,
北京：科学出版社, 2014.
[57] C. H. Wan*; Z. H. Yuan; P. Liu; H. Wu; P. Guo; D. L. Li; S. S. Ali;
No nlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon,
Applied Physics Letters, 2013, 103: 262406.
[58] J. M. Wang; X. Z. Zhang*; C. H. Wan; J. Vanacken; V. V. Moshchalkov;
Magnetotransport properties of undoped amorphous carbon films,
Carbon, 2013, 59: 278-282.
[59] J. M. Wang; X. Z. Zhang*; C. H. Wan; H.-G. Piao; Z. C. Luo; S. Y. Xu;
Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature,
Journal of Applied Physics, 2013, 114: 034501.
[60] X. L. Gao; X. Z. Zhang*; C. H. Wan; J. M. Wang; X. Y. Tan; D. C. Zeng;
Temperature-dependent resistive switching of amorphous carbon/silicon heterojunctions,
Diamond and Related Materials, 2012, 22: 37-41.
[61] C. H. Wan; X. Z. Zhang*; X. L. Gao; J. M. Wang; X. Y. Tan;
Geometrical enhancement of low-field magnetoresistance in silicon, Nature, 2011, 477: 304-307.
[62] C. H. Wan; X. Z. Zhang*; J. Vanacken; X. L. Gao; X. Zhang; L. H. Wu; X. Y. Tan; H. Lin; V. V. Moshchalkov; J. Yuan;
Electro- and magneto-transport properties of amorphous carbon films doped with iron,
Diamond and Related Materials, 2011, 20: 26-30.
[63] C. H. Wan; X. Z. Zhang*; J. Vanacken; X. L. Gao; V. V. Moshchalkov;
The dependence of barrier heights of a-C: Fe/n-Si heterojunctions on film-depositing temperatures,
Journal of Applied Physics, 2011, 109: 103706.
[64] L. H. Wu; X. Zhang*; J. Vanacken; N. Schildermans; C. H. Wan; V. V. Moshchalkov;
Room-temperature nonsaturating magnetoresistance of intrinsic bulk silicon in high pulsed magnetic fields,
Applied Physics Letters, 2011, 98: 112113.
[65] X. L. Gao; X. Z. Zhang*; C. H. Wan; X. Zhang; L. H. Wu; X. Y. Tan;
Abnormal humidity-dependent electrical properties of amorphous carbon/silicon heterojunctions,
Applied Physics Letters, 2010, 97: 212101.
[66] C. H. Wan; X. Z. Zhang*; X. Zhang; X. L. Gao; X. Y. Tan;
Photoconductivity of iron doped amorphous carbon films on n-type silicon,
Applied Physics Letters, 2009, 95: 022105.
Representative research achievements and academic awards other than the works
[1] X. F. Han *; C. h. Wan; X. Zhang; spin logic device and electronic equipment including same, 2016-9-2, USA, 15/256262.(patents)[2] Wang Caihua; Zhang Xuan; Han Xiufeng *; current driven magnetic random access memory and spin logic device, 2015-9-10, China, cn201510574526.5. (patent)
[3] Zhang Xuan; Wan Caihua; Han Xiufeng *; spin logic devices and electronic devices including them, 2016-1-29, China, cn201610064129.8. (patent)
[4] Han Xiufeng *; Zhang Xuan; Wan Caihua; programmable spin logic devices and their electronic devices, 2016-3-30, China, cn201610190767.4. (patent)
[5] Han Xiufeng *; Guo Chenyang; Wan Caihua; magneton magnetoresistance and spin Hall magnetoresistance device based on magneton valve and magneton junction, February 20, 2019, China, 2019101, 25883.1. (patent)
[6] Wan Caihua; spin orbit torque switching in the T-type magnetic coupled systems, Zhengzhou, China Physical Society, 2019 autumn Physics Conference, from September 19, 2019 to September 22, 2019
[7] C. h. Wan; chirality controllable spin orbit torque switching in coupled system, the 4th Conference on condensed matter Physics (ccmp-2018), Shanghai, July 5, 2018 to July 8, 2018
[8] Wang Caihua; research on magnetic moment reversal induced by electric spin orbit moment, Chinese society of physics, autumn academic conference, Chengdu, September 7, 2017 to September 10, 2017
[9] Wan Caihua (4/6); basic research on materials, physics and chip application of high performance tunneling magnetoresistance magnetic sensor, the third prize of Beijing Science and technology award, others,others, 2017 (Han Xiufeng; Liu houfang; Wei Hongxiang; Wan Caihua; Ma Qinli; Yu Guoqiang). (Research Award)
Address: Beijing National Laboratory for Condensed Matter Physics No.8, 3rd South Street, Zhongguancun, Haidian District, Beijing 100190, China Code: 100190 Tel：+86-10-82649268 Fax：+86-10-82649485 Email：xfhan@iphy.ac.cn