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组内成员

职工

学生

研究方向

仪器设备

发表论文

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  曾中明



教育经历

  1. 2003 ~ 2006,中国科学院物理研究所磁学国家重点实验室,博士,导师:韩秀峰 研究员
  2. 2000 ~ 2003,中南大学,材料学院,硕士,导师:刘心宇 教授
  3. 1996 ~ 2000,中南大学,材料学院,学士

研究方向
(1)自旋电子学,包括基于电子自旋特性的磁性随机存储器、微波振荡器和探测器、忆阻器,以及纳米结构中的自旋注入。
(2)纳米器件:基于MoS2、黑磷等二维材料的纳米器件物性研究。

 

主要代表性学术论文目录:

  1. B. Fang, M. Carpentieri, X. J. Hao, H. W. Jiang, J. A. Katine, I. N. Krivorotov, B. Ocker, J. Langer, Kang L. Wang, B. S. Zhang, B.Azzerboni, P. K. Amiri, G. Finocchio and Z. M. Zeng*. Giant spin-torque diode sensitivity in the absence of bias magnetic field. Nature comm. 7, 11259(2016).
  2. B. S. Wan, B. C. Yang, Y. Wang, J. Y. Zhang*, Z. M. Zeng*, Z. Y. Liu and W. H. Wang,Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation, Nanotechnology 26,435702(2015).
  3. T. Li, G. Du, B. S. Zhang, and Z. M. Zeng*. Scaling behavior of hysteresis in multilayer MoS2 field effect transistors. Appl. Phys. Lett. 105, 093107 (2014).
  4. Z. M. Zeng*, G. Finocchio, B. S. Zhang, P. K. Amiri, J. A. Katine, I. N. Krivorotov, Y. Huai, J. Langer, B. Azzerboni, K. L. Wang, and H. W. Jiang. Ultralow-current-density and bias-field-free spin-transfer nano-oscillator, Sci. Rep. 3, 1426 (2013).
  5. Z. M. Zeng*, G. Finnocchio, and H. W. Jiang. Spin transfer nano-oscillators, Nanoscale 5, 2219 (2013) (Invited Review Article).
  6. Z. M. Zeng*, P. Khalili Amiri, I. Krivorotov, H. Zhao, J.-P. Wang, J. A. Katine, Y. Huai, J. Langer, K. Galatsis, K. L. Wang, and H. W. Jiang. High-power coherent microwave emission from CoFeB–MgO magnetic tunnel junction oscillators with perpendicular anisotropy, ACS NANO 6, 6115 (2012).
  7. Z. M. Zeng*, P. K. Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, and H. W. Jiang. Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation, Appl. Phys. Lett. 99, 032503 (2011).
  8. Z. M. Zeng*, P. K. Amiri, G. Rowlands, H. Zhao, I. N. Krivorotov, J. P. Wang, J. A. Katine, J. Langer, K. Galatsis, K. L. Wang, and H. W. Jiang. Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells, Appl. Phys. Lett. 98, 072512 (2011).
  9. Z. M. Zeng*, K. H. Cheung, H. W. Jiang, I. N. Krivorotov, J. A. Katine, V. Tiberkevich and A. Slavin. Evolution of spin-wave modes in magnetic tunnel junction nanopillars, Phys. Rev. B 82, 100410 (R) (2010).
  10.  Z. M. Zeng, J. F. Feng, Y. Wang, X. F. Han, W. S. Zhan, X.-G. Zhang, and Z. Zhang. Probing Spin-flip scattering in ballistic nanosystem, Phys. Rev. Lett. 97, 106605 (2006).


   
                                 
 

地址:北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190     电话:+86-10-82649268 传真:+86-10-82649485 电子邮件:xfhan@iphy.ac.cn