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丰家峰 副研究员 丰家峰现为中国科学院物理研究所副研究员、中国科学院大学岗位教师。2002年毕业于安徽大学物理系、2007年在中国科学院物理研究所取得博士学位。2007至2011年在爱尔兰圣三一学院、2011至2013年在法国Spintec研究中心从事科学研究。中科院青年创新促进会2017届会员 丰家峰主要从事“自旋电子学材料和物理方面的基础和应用”研究工作,在磁性随机存储器(Magnetic Random Access Memory, MRAM)、磁敏传感器(Magnetic sensors)和自旋转矩纳米振荡器(Spin Torque Nano-oscillators, STNO)的材料和结构优化、微纳米加工制备、物性探测表征及相关器件的基础研制方面取得有一定研究成果。在Physical Review Letters, Nature Communications, Nano Letters, Advanced Materials, Science Advances, Physical Review Applied, Applied Physics Letters等学术期刊上发表SCI收录论文90 余篇,他引接近600次。获得中国和美国发明专利授权10余项。作为参与人之一,分别获得2013 和2017年度北京市科学技术一等奖和三等奖。 所在单位及职称 中科院物理所,磁学国家重点实验室,副研究员 研究工作经历 受教育经历 主要学术任职 代表性期刊论文(*代表通讯作者) [1] High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2Hongjun Xu, Jinwu Wei, Hengan Zhou, Jiafeng Feng, Teng Xu, Haifeng Du, Congli He, Yuan Huang, Junwei Zhang, Yizhou Liu, Han-Chun Wu, Chenyang Guo, Xiao Wang, Yao Guang, Hongxiang Wei, Yong Peng, Wanjun Jiang, Guoqiang Yu, and Xiufeng Advanced Materials 2020, 2000513 (2020) [2] Creating zero-field skyrmions in exchange-biased multilayers through X-ray illumination Yao Guang, Iuliia Bykova, Yizhou Liu, Guoqiang Yu, Eberhard Goering, Markus Weigand, Joachim Gräfe, Se Kwon Kim, Junwei Zhang, Hong Zhang, Zhengren Yan, Caihua Wan, Jiafeng Feng, Xiao Wang, Chenyang Guo, Hongxiang Wei, Yong Peng, Yaroslav Tserkovnyak, Xiufeng Han and Gisela Schütz Nature Communications 11:949 (2020) [3] Coherent Resonant Tunneling through Double Metallic Quantum Well States Bingshan Tao, Caihua Wan, Ping Tang, Jiafeng Feng, Hongxiang Wei, Xiao Wang, Stéphane Andrieu, Hongxin Yang, Mairbek Chshiev, Xavier Devaux, Thomas Hauet, François Montaigne, Stéphane Mangin, Michel Hehn, Daniel Lacour, Xiufeng Han, and Yuan Lu Nano Letters 19, 3019−3026 (2019) [4] Strategy for Fabricating Wafer-Scale Platinum Disulfide Hongjun Xu, Hsin-Pan Huang, HaiFeng Fei, Jiafeng Feng, Huei-Ru Fuh, Jiung Cho, Miri Choi, Yanhui Chen, Lei Zhang, Dengyun Chen, Duan Zhang, Cormac Ó Coileáin, Xiufeng Han, Ching-Ray Chang and Han-Chun Wu ACS Applied Materials & Interfaces 11, 8202-8209 (2019) [5] Anatomy of Skyrmionic Textures in Magnetic Multilayers Wenjing Li, Iuliia Bykova, Shilei Zhang, Guoqiang Yu, Riccardo Tomasello, Mario Carpentieri, Yizhou Liu, Yao Guang, Joachim Gräfe, Markus Weigand, David M. Burn, Gerrit van der Laan, Thorsten Hesjedal, Zhengren Yan, Jiafeng Feng, Caihua Wan, Jinwu Wei, Xiao Wang, Xiaomin Zhang, Hongjun Xu, Chenyang Guo, Hongxiang Wei, Giovanni Finocchio, Xiufeng Han, and Gisela Schütz Advanced Materials 2019, 1807683 (2019) [6] Spin-orbit torque switching in perpendicular Y3Fe5O12/Pt bilayer. C. Y. Guo, C. H. Wan, M. K. Zhao, H. Wu, C. Fang, Z. R. Yan, J. F. Feng, H. F. Liu, and X. F. Han Applied Physical Letters 114, 192409 (2019) [7] Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2 Xiao Wang, Jian Tang, Xiuxin Xia, Congli He, Junwei Zhang, Yizhou Liu, Caihua Wan, Chi Fang, Chenyang Guo, Wenlong Yang, Yao Guang, Xiaomin Zhang, Hongjun Xu, Jinwu Wei, Mengzhou Liao, Xiaobo Lu, Jiafeng Feng, Xiaoxi Li, Yong Peng, Hongxiang Wei, Rong Yang, Dongxia Shi, Xixiang Zhang, Zheng Han, Zhidong Zhang, Guangyu Zhang, Guoqiang Yu, Xiufeng Han Science Advances 5, eaaw8904 (2019) [8] Temperature dependence of shot noise in double barrier magnetic tunnel junctions Jiasen Niu, Liang Liu, J. F. Feng, X. F. Han, J. M. D. Coey, X.-G. Zhang, and Jian Wei Physical Review B 97, 104412 (2018) [9] Magnon Valve Effect between Two Magnetic Insulators H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H. X. Wei, and X. F. Han Physical Review Letters 120, 097205 (2018) [10] Threshold Magnetoresistance in Anistropic Magnetic 2D Transition Metal Dichalcogenides Hongjun Xu, Ming-Chien Hsu, Huei-Ru Fuh, Jiafeng Feng, Xiufeng Han, Yanfeng Zhao, Duan Zhang, Xinming Wang, Fang Liu, Huajun Liu, Jiung Cho, Miri Choi, Byong Sun Chun, Cormac Ó Coileáin, Zhi Wang, Mansoor B. A. Jalil, Han-Chun Wu and Ching-Ray Chang J. Mater. Chem. C 2018, DOI: 10.1039/C7TC05769E [11] Giant Perpendicular Exchange Bias in a Subnanometer Inverted (Co/Pt)n/Co/IrMn Structure Jiafeng Feng, H. F. Liu, H. X. Wei, X.-G. Zhang, Yong Ren, Xinxi Li, Yan Wang, J. P. Wang, and X. F. Han, Physical Review Applied 7, 054005 (2017) [12] Tunneling anisotropic magnetoresistance driven by magnetic phase transition X. Z. Chen, J. F. Feng, Z. C. Wang, J. Zhang, X. Y. Zhong, C. Song, L. Jin, B. Zhang, F. Li, M. Jiang, Y. Z. Tan, X. J. Zhou, G. Y. Shi, X. F. Zhou, X. D. Han, S. C. Mao, Y. H. Chen, X. F. Han, and F. Pan Nature Communications 8, 449 (2017); DOI: 10.1038/s41467-017-00290-4 [13] Spin-flip noise due to nonequilibrium spin accumulation Liang Liu, Jiasen Niu, Huiqiang Guo, Jian Wei*,D.-L. Li, J.-F. Feng*, X.-F. Han, J. M. D. Coey, and X.-G. Zhang Physical Review B 93, 180401(R) (2016) [14] Temperature dependence of microwave oscillation in magnetic tunnel junctions with a perpendicular CoFeB free layer. Peng Guo, J. F. Feng*, H. X. Wei*, X. F. Han, B. Fang, B.S. Zhang, and Z. M. Zeng Applied Physics letters 106, 012402 (2015) [15] Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control Houfang Liu, Ran Wang, Peng Guo, Zhenchao Wen, Jiafeng Feng, et al. Scientific Reports 5,18269 (2015) [16] Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly Liang Liu, Jiasen Niu, Li Xiang,Jian Wei*, D. L. Li, J. F. Feng*, and X. F. Han, X.-G. Zhang, J. M. D. Coey Physical Review B 90, 195132 (2014) [17] Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction B . S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han, Y. Liu, Y. G. Zhao, Q. Zhang, Z. B. Guo, and X. X. Zhang Applied Physics letters 105, 102407 (2014) [18] Origin of ferromagnetism in aluminum-doped TiO2 thin films: Theory and experiments Xianjie Wang, Yongli Song, L. L. Tao, J. F. Feng, Yu Sui, Jinke Tang, Bo Song, Yi Wang, Yang Wang, Yu Zhang, and X. F. Han Applied Physics letters 105, 262402 (2014) |
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地址:北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190 电话:+86-10-82649268 传真:+86-10-82649485 电子邮件:xfhan@iphy.ac.cn |