魏红祥 研究员
魏红祥，理学博士研究员，中国科学院物理研究所所务委员，中国物理学会科普委员会主任，中科院物理所长三角研究中心常务副主任。主要从事磁学和磁性材料方面的研究，在高频自旋纳米振荡器、高密度非易失磁性存储器、超灵敏磁性传感器等方面取得了一系列的研究成果。主持、参加科技部、基金委、科学院科研项目20余项，发表学术论文60余篇，获得中国发明专利授权30余项，部分研究成果荣获北京市科学技术一等奖。
代表性工作
一、基于纳米磁性隧道结的新型磁随机存储器（MRAM）的设计与制备。
开头参与了课题组设计、制备传统的 MRAM 的全部过程。课题组设计制备的 MRAM 原理型器件全程基于国内力量，实现了 CMOS 的设计与制备、 CMOS 表面金属层的精细抛光 (CMP) 、磁性隧道结的集成与测试、样品的健合与封装、样品的性能测试等各个环节。测试结果表明主要技术参数均达到了设计指标。特别值得一提的是，在深入研究和制备传统的 MRAM 的过程中，与同事一起提出了新型的基于纳米环形磁性隧道结的新型 MRAM 。制备出直径为 100 纳米、壁宽为 25-30 纳米的圆环形磁性隧道结。这是目前为止壁宽最窄的圆环形磁性隧道结。实现了电流驱动，驱动电流小于 1 毫安。这一研究成果为高密度 MRAM 的开发提供了一条新的途径，获得了国际同行的高度评价。
二、高性能磁性隧道结的制备与研究。
开头通过优化工艺条件，利用本实验室的磁控溅射设备制备出磁电阻比值高达 80%的以氧化铝为势垒层的磁性隧道结。这一结果保持着目前以氧化铝为势垒层的磁性隧道结的最好结果。 同时我们在具有垂直各项异性磁性隧道结、双势垒磁性隧道结以、具有线性磁场响应磁性隧道结以及纳米尺度磁性隧道结的制备方面也具有很好的积累。
三、纳米结构图形的设计、制备与研究。
开头目前利用聚焦离子束刻蚀 (FIB) 、电子束曝光 (EBL) 、化学反应刻蚀 (RIE) 、氩离子束刻蚀 (AIE) 等微加工设备制能够备出直径为 3 － 5 纳米的孔洞；直径为10-30纳米的点阵；宽度为10-50纳米的线、圆环、椭圆环等。同时也开展一些结构更为复杂的纳米图案的设计与制备。
荣誉
开头博士期间获得了科学院的多项奖励。是所长奖学金优秀奖和中科院研究生院三好学生标兵称号获得者。同时也是中科院－ BHBP 公司（澳大利亚）奖学金获得者。获得中科院科技创新类研究项目支持，得到 IEEE 协会资助赴美国参加学术会议，因博士期间的出色表现，被评为中科院优秀毕业生。
代表性论文
[57] Anatomy of Skyrmionic Textures in Magnetic Multilayers
W. J. Li, I. Bykova, S. L. Zhang, G. Q. Yu, * R. Tomasello, M. Carpentieri, Y. Z. Liu, Y. Guang, J. Grafe, M. Weigand, D. M. Burn, G. V. D. Laan, T. Hesjedal, Z. R. Yan, J. F. Feng, C. H. Wan, J. W. Wei, X. Wang, X. M. Zhang, H. J. Xu, C. Y. Guo, H. X. Wei, G. Finocchio, * X. F. Han and G. Schütz Adv. Mater. 31 (2019) 1807683
[56] Thermally activated magnetization backhopping based true random number generator in nano-ring magnetic tunnel junctions
J. Y. Qin, X. Wang, T. Qu, C. H. Wan, L. Huang, C. Y. Guo, T. Yu, H. X. Wei and X. F. Han*
Appl. Phys. Lett. 114 (2019) 112401 (Editors' Suggestion)
[55] Coherent Resonant Tunneling through Double Metallic Quantum Well States
B. S. Tao, C. H. Wan, P. Tang, J. F. Feng, H. X. Wei, X. W, S. Andrieu, H. X. Yang, M. B. Chshiev, X. Devaux, T. Hauet, F. Montaigne, S. Mangin, M. Hehn, D. Lacour, X. F. Han, and Y. Lu
Nano Letters 19 (2019) 3019
[54] Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2
X. Wang, J. Tang, X. X. Xia, C. L. He, J. W. Zhang, Y. Z. Liu, C. H. Wan, C. Fang, C. Y. Guo, W. L. Yang, Y. Guang, X. M. Zhang, H. J. Xu, J. W. Wei, M. Z. Liao, X. B. Lu, J. F. Feng, X. X. Li, Y. Peng, H. X. Wei, R. Yang, D. X. Shi, X. X. Zhang, Z. Han,* Z. D. Zhang, G. Y. Zhang,* G. Q. Yu,* X. F. Han
Sci. Adv. 5, eaaw8904 (2019)
[53] Tunneling anisotropic magnetoresistance in fully epitaxial MTJs with different barriers
B. S. Tao, L. N. Jiang, W. J. Kong, W. Z. Chen, B. S. Yang, X. Wang, C. H. Wan, H. X. Wei, M. Hehn, D. Lacour, Y. Lu* and X. F. Han*
Appl. Phys. Lett. 112 (2018) 242404
[52] Magnetic Configurations and State Diagram of Nanoring Magnetic Tunnel Junctions
H. F. Liu, H. X. Wei, X. F. Han, G. Q. Yu, W. S. Zhan, S. L. Gall, Y. Lu, M. Hehn,S. Mangin, M. J. Sun, Y. W. Liu, and C. Horng
Phys. Rev. Appl. 10 (2018) 054013
[51] Microwave Spin-Torque-Induced Magnetic Resonance in a Nanoring-Shape-Confined MTJs
J. Y. Qin, X. Chen, T. Yu, X. Wang, C. Y. Guo, C. H. Wan, J. F. Feng, H. X. Wei, Y. W. Liu and X. F. Han*
Phys. Rev. Appl. 10 (2018) 044067
[50] Magnon valve effect between two magnetic insulators
H. Wu, L. Huang, C. Fang, B. Yang, C. H. Wan, G. Yu, J. Feng, H. Wei, X. F. Han*
Phys. Rev. Lett. 120 (2018) 097205 (Editors' Suggestion, Featured in Physics)
[49] Temperature dependence of spin-torque driven ferromagnetic resonance in MgO-based magnetic tunnel junction with a perpendicularly free layer
X. Wang, J. F. Feng, P. Guo, H. X. Wei, X. F. Han*, B. Fang, Z. M. Zeng
J. Magn. Magn. Mater. 443 (2017) 239
[48] Giant Perpendicular Exchange Bias in a Subnanometer Inverted (Co/Pt)n/Co/IrMn Structure
J.F. Feng, H.F. Liu, H. X. Wei, X.-G. Zhang,Y. Ren, X.X. Li, Y. Wang, J.P. Wang, X. F. Han
Phys. Rev. Appl. 7 (2017) 054005
[47] Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy
K. Y. Ning, H. F. Liu, Z. Y. Ju, C. Fang, C. H. Wan, J. L. Cheng, X. Liu, L. S. Li, J. F. Feng, H. X. Wei, X. F. Han, Y. Yang, T. L. Ren
AIP Adv. 7 (2017) 015035
[46] Tailoring perpendicular magnetic anisotropy with graphene oxide membranes
K. Y. Ning, H. F. Liu, L. S. Li, H. L. Li, J. F. Feng, B. S. Yang, X. Liu, Y. X. Li, Y. H. Chen, H. X. Wei, X. F. Han, S. C. Mao, X. X. Zhang, Y. Yang, T. L. Ren
RSC Adv. 7 (2017) 52938
[45] Observation of magnon-mediated electric current drag at room temperature
H. Wu, C.H. Wan, X. Zhang, Z. Yuan, Q. Zhang, J. Qin, H. Wei, X. F. Han*, S. Zhang*
Phys. Rev. B 93 (2016) 060403(R)
[44] Temperature dependence of microwave oscillations in magnetic tunnel junctions with a perpendicularly magnetized free layer
P. Guo, J. F. Feng*, H. X. Wei*, X. F. Han, B. Fang, B. S. Zhang, and Z. M. Zeng*
Appl. Phys. Lett. 106 (2015) 012402
[43] Effect of interfacial structures on spin dependent tunneling in epitaxial L10- FePt/MgO/FePt perpendicular magnetic tunnel junctions
G. Yang, D. L. Li, S. G. Wang*, Q. L. Ma, S. H. Liang, H. X. Wei, X. F. Han, T. Hesjedal, R. C. C. Ward, A. Kohn, A. Elkayam, N. Tal, and X.-G. Zhang
Journal of Applied Physics 117 (2015) 083904
[42] Manipulation of Tunnel Magnetoresistance via temperature and voltage control
H. F. Liu, R. Wang, P. Guo, Z. C. Wen, J.F. Feng, H. X. Wei, X. F. Han*, Y. Ji, S. Zhang*
Scientific reports. 5 (2015)18269
[41] Transport Properties in Sputtered CoFeB/MgAl2O4/CoFeB Magnetic Tunnel Junction
B. S. Tao, D. L. Li, H. F. Liu, H. X. Wei, J. F. Feng, S. G. Wang, and X. F. Han*
IEEE Transactions on Magnetics 50 (2014) 4401004
[40] Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction
B. S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han*, Y. Liu, Y. G. Zhao, Q. Zhang, Z. B. Guo, and X. X. Zhang
Appl. Phys. Lett. 105 (2014) 102407
[39] Tunneling magnetoresistance in Fe3Si/MgO/Fe3Si(001) magnetic tunnel junctions
L. L. Tao, S. H. Liang, D. P. Liu, H. X. Wei, J. Wang, and X. F. Han*
Appl. Phys. Lett. 104 (2014) 172406
[38] Nonlinear temperature dependent nucleation field in perpendicular exchange spring typed magnetic tunnel junctions
Yi Wang, D. Le Roy, Jun Jiang, Xiaolu Yin, H. X. Wei, S. H. Liou, and X. F. Han
J. Appl. Phys. 113 (2013) 17C113
[37] Magnetization reversal and enhanced tunnel magneto resistance ratio in perpendicular magnetic tunnel junctions based on exchange spring electrodes
Yi Wang, Xiaolu Yin, D. Le Roy, Jun Jiang, H. X. Wei, S. H. Liou, and X. F. Han
J. Appl. Phys. 113 (2013) 133906
[36] MgO-Based Double Barrier MTJs With Synthetic Antiferromagnetic Free Layer
D. L. Li, J. F. Feng, G. Q. Yu, H. X. Wei, X. F. Han, and J. M. D. Coey
IEEE Trans. Magn. 49 (2013) 5204
[35] Low frequency noise in magnetic tunneling junctions with Co40Fe40B20/Co70.5Fe4.5Si15B10 composite free layer
Z. H. Yuan, J. Feng, P. Guo, C. H. Wan, H.X. Wei, S.S. Ali, X. F. Han*, T. Nakano, H. Naganuma, and Y. Ando
Journal of Magnetism and Magnetic Materials 398 (2015) 215
[34] Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films
D. L. Li, Q. L. Ma, S. G. Wang*, R. C. C. Ward, T. Hesjedal, X.-G. Zhang, A. Kohn, E. Amsellem, G. Yang, J. L. Liu, J. Jiang, H. X. Wei and X. F. Han
Sci. Rep. 4 (2014) 7277
[33] Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
D. L. Li, J. F. Feng, G. Q. Yu, P. Guo, J. Y. Chen, H. X. Wei, X. F. Han, and J. M. D. Coey
J. Appl. Phys. 114 (2013) 213909
[32] Evidence for magnon excitation contribution to the magnetoresistance behavior during thermal annealing in CoFeB/MgO/CoFeB magnetic tunnel junctions
Q. L. Ma, S. G. Wang, H. X. Wei, H. F. Liu, X.-G. Zhang, and X. F. Han
Phys. Rev. B 83 (2011) 224430
[31] Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design with Spin-Polarized Current Switching (Invited paper)
X. F. Han, Z. C. Wen, Y. Wang, H. F. Liu, H. X. Wei, D. P. Liu
IEEE Trans. Magn. 47 (2011) 2957 .
[30] Patterned Nanoscale Magnetic Tunnel Junctions with Different Geometry Structures
Z. C. Wen, Y. Wang, G. Q. Yu, H. X. Wei, B. S. Zhang, K. Xu, and X. F. Han
Spin 1 (2011) 109
[29] Signatures of surface magnon and impurity scatterings in tunnel junctions
H. X. Wei, Q. H. Qin, Q. L. Ma, X.G. Zhang and X. F. Han*
Phys. Rev. B 82 (2010) 134436
[28] Effect of annealing on the MTJ with Co/Pt perpendicular anisotropy ferromagnetic multilayers
Yi. Wang, W. X. Wang, H. X. Wei, B. S. Zhang, W. S. Zhan, and X. F. Han*
J. Appl. Phys.107 (2010) 09C711
[27] Cotunneling enhancement of magnetoresistance in double magnetic tunnel junctions with embedded superparamagnetic NiFe nanoparticles
K.J. Dempsey, A. T. Hindmarch, H.-X. Wei, Q.-H. Qin, Z.-C. Wen, W.-X. Wang, G.Vallejo-Fernandez, D. A. Arena, X. F. Han, and C. H. Marrows
Phys. Rev. B 82 (2010) 214415
[26] Giant Coulomb blockade magnetoresistance (CBMR) in MTJs with a granular layer
X. -G. Zhang, Z. C. Wen, H. X. Wei, and X. F. Han
Phys. Rev. B 81 (2010) 155122
[25] Structural and magnetic changes in MgO-based MTJs during the early stages of annealing.
R. I. G. Anderson, H. X. Wei, N. Porter, D. Arena, J. Dvorak, X. F. Han, C.H. Marrows
J. Magn. Magn. Mater. 322 (2010) 756-761
[24] Changes in the layer roughness and crystallography during the annealing of CoFeB/MgO/CoFeB magnetic tunnel junctions.
G. I. R. Anderson, H. X. Wei, N. A. Porter, V. Harnchana, A. P. Brown, R. M. D. Brydson, D. A. Arena, J. Dvorak, X. F. Han, and C. H. Marrows
J. Appl. Phys. 105 (2009) 063904
[23] Magnetic tunnel junction sensor with Co/Pt perpendicular anisotropy ferromagnetic layer.
H. X. Wei, Q. H. Qin, Z. C. Wen, X. F. Han, and X. G. Zhang
Appl. Phys. Lett. 94 (2009) 172902
[22] Linear magnetic field response spin valve with perpendicular anisotropy ferromagnet layer
Q. H. Qin, H. X. Wei and X. F. Han*, et al.
J. Appl. Phys. 103 (2008) 07E906
[21] Surface plasmon polaritons assisted diffraction in metal films with subwave length hole array
X. Fang, H. X. Wei, M. Kamran, J. Y. Ma, H. Y. Zhao, X. F. Han, X. G. Qiu
J. Phys. Chem. Solids 69 (2008) 3093--3095
[20] Effects of the current on the nanoscale ring-shaped magnetic tunnel junctions
H. X. Wei, J. X. He, Z. C. Wen, X. F. Han*, S. Zhang.
Phys. Rev. B 77 (2008) 134432
[19] Current-induced magnetization switching in a microscale ring-shaped MTJ
H. X. Wei, M. C. Hickey, G. I. R. Anderson, X. F. Han, and Christopher H. Marrows
Phys. Rev. B 77 (2008) 132401
[18] Nanoring MTJ and its application in MRAM demo devices with spin-polarized current switching (Invited paper),
X. F. Han*, Z. C. Wen, and H. X. Wei, et al.
J. Appl. Phys. 103 (2008) 07E933
[17] Current-induced multiple spin structures in 100-nm nanoring magnetic tunnel junctions
H. X. Wei, F. Q. Zhu, X. F. Han*, Z. C. Wen, C. L. Chien
Phys. Rev. B 77 (2008) 224432
[16] Patterned nanoring magnetic tunnel junctions
Z. C. Wen, H. X. Wei, and X. F. Han*
Appl. Phys. Lett. 91 (2007) 122511
[15] An approach to fabricate pure metallic Ni-Ni and metallic oxide Ni-NiO-Ni nanocontacts by repeatable microfabrication method
H. X. Wei, T. X. Wang, H. Wang, X. F. Han*, M. A. Bari, and J. M. D. Coey
Int. J. Nanotechnology 4(1/2) (2007) 21-27
[14] 80% TMR at RT for thin Al–O barrier MTJs with CoFeB as free and reference layers
H. X. Wei, Q. H. Qin, M. Ma, R. Sharif, and X. F. Han*
J. Appl. Phys. 101 (2007) 09B501
[13] Surface-Plasmon-Polariton Assisted Diffraction in Periodic Subwavelength Holes of Metal Films with Reduced Interplane Coupling
X. Fang, Z.Y. Li, Y.B. Long, H.X. Wei, R.J. Liu, J.Y. Ma, M. Kamran, H.Y. Zhao, X.F. Han, B.R. Zhao, and X.G. Qiu*
Phys. Rev. Lett. 99 (2007) 066805
[12] A novel design and fabrication of MRAM based on nano-ring-type MTJs (Letter to Editor)
X. F. Han, H. X. Wei, Z. L. Peng, H. D. Yang, J. F. Feng, G. X. Du, Z. B. Sun, L. X. Jiang, Q. H. Qin, M. Ma, Y. Wang, Z. C. Wen, D. P. Liu, and W. S. Zhan
J. Mater. Sci. & Tech 23 (2007) 304
[11] Controlled Fabrication of Nickel Perpendicular Nanocontacts using Focused Ion beam Milling
H. X. Wei，R M. Langford，X. F. Han*, J. M. D. Coey
J. Appl. Phys. 99 (2006) 08C501
[10] Magnetoresistance nickel nanocontacts fabricated by three different methods.
H. X. Wei, T. X. Wang, X. F. Han*, R M. Langford, and J. M. D. Coey
J. Appl. Phys. 99 (2006) 08C512
[9] Controlled fabrication of nano-scale double barrier MTJs using focused ion beam milling method.
H. X. Wei, T. X. Wang, Z. M. Zeng, X. Q. Zhang, J. Zhao, X. F. Han*
J. Magn. Magn. Matter. 303 (2006) c219-c222
[8] High magnetoresistance in Co-Fe-B based double barrier magnetic tunnel junctions
Z. M. Zeng, H. X. Wei, L. X. Jiang, G. X. Du, W. S. Zhan, and X. F. Han*
J. Magn. Magn. Matter. 303 (2006) c208-c211
[7] Magnetic/nonmagnetic/magnetic tunnel junction based on hybrid organic LB-films
T. X. Wang, H. X. Wei, Z. M. Zeng, and X. F. Han*, Z. M. Hong and G. Q. Shi
Appl. Phys. Lett. 88 (2006) 242505
[6] A novel method of nanocontact fabrication for Andreev reflection measurement
T. X. Wang, H. X. Wei, C. Ren, X. F. Han*, E. Clifford, R. M. Langford, M.A. Bari, and J. M. D. Coey,
Chinese J. of Semiconductors 27(4) (2006) 619
[5] Perpendicular current-driven magnetization switching in free layer of MTJs and MRAM,
Z. L. Peng, X. F. Han, S.F. Zhao, H. X. Wei, G. X. Du, and W. S. Zhan
Acta Physica Sinica 55 (2) (2006) 860—864
[4] Spin transport in multi wall Carbon Nanotube with Co electrodes
T. X. Wang, H. X. Wei, X. F. Han*, X.G. Zhang, M.A. Bari, and J.M.D. Coey
Chinese Physics Letter 23 (10) (2006) 2852-2855
[3] Microfabrication methods of magnetic tunnel junctions with high TMR
F. F. Li, X. Q. Zhang, G. X. Du, T. X. Wang, Z. M. Zeng, H. X. Wei, X. F. Han
Acta Physica Sinica 54 (2005) 346
[2] Vortex domain structures and dc current dependence of magneto-resistances in MTJ
H. X. Wei, Q. F. Lu, S. F. Zhao, X. Q. Zhang, J. F. Feng and X. F. Han
Chinese Physics 13 (2004) 1553
[1] Microfabrication of magnetic tunnel junctions on 4-inch Si/SiO2 substrate
T. X. Wang, H. X. Wei, F. F. Li, A. G. Zhang, Z. M. Zeng, W. S. Zhan, X. F. Han
Acta Physica Sinica 53 (2004) 3895
地址：北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190 电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn