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  刘厚方


教育经历

  1. 2014.5至今：清华大学微电子学研究所，博士后，合作导师：任天令教授
  2. 2008.9-2013.7：中国科学院物理研究所，博士，导师：韩秀峰研究员
  3. 2004.9-2008.7：山东大学物理系，学士

研究方向
生物-磁阻传感器：巨磁电阻、隧穿磁电阻传感器
自旋电子学(Spin Orbitronics): 自旋转移力矩效应、自旋霍尔效应
MEMS器件：片上微电感、微天线设计

主要代表性学术论文目录：

  1. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control

    2. H. F. Liu, R. Wang, P. Guo, Z. C. Wen, J. F. Feng, H. X. Wei, X. F. Han, Y. Ji, and S.-Zhang
    Sci. Rep. 5, 18269 (2015).

  2. A Novel MEMS-Based 13.56 MHz Micro Antenna for RFID Applications

    3. B. J. Qu, H. F. Liu, Q. Ye, Y. J. Geng, T.-L. Ren, H. X. Wei, X. F. Han
    IEEE Trans. Magn., 51 (2015) 4700203

  3. Perpendicular magnetic tunnel junction and its application in magnetic random access memory (invited)

    4. H. F. Liu, Syed Shahbaz Ali and X. F. Han
    Chin. Phys. B 23 (2014) 077501

  4. Perpendicular magnetic anisotropy in Ta│Co40Fe40B20│MgAl2O4 structures and perpendicular CoFeB│MgAl2O4│CoFeB magnetic tunnel junction

    5. B. S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han, Y. Liu, Y. G. Zhao, Q. Zhang, Z. B. Guo, and X. X. Zhang
    Appl. Phys. Lett. 105, 102407 (2014)

  5. Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector

    6. S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffres, J. M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang and Y. Lu*,
    Phys. Rev. B 90, 085310 (2014)

  6. Anomalous Hall effect in amorphous Co40Fe40B20

    7. G. Su, Y. F. Li, D. Z. Hou, X. F. Jin, H. F. Liu, and S. G. Wang
    Phys. Rev. B 90, 214410 (2014)

  7. Tuning asymmetry parameter of Fano resonance of spoof surface plasmons by modes coupling

    8. F. Cheng, H. F. Liu, B. H. Li, J. Han, H. Xiao, X. F. Han, C. Z. Gu, and X. G. Qiu
    Appl. Phys. Lett. 100, 131110 (2012)

  8. Local rotational symmetry effects on Fano resonances with constant non-resonant transmission channel

    9. B. H. Li, H. F. Liu, F. Cheng, J. Han, H. Xiao, X. F. Han, C. Z. Gu, X. G. Qiu
    Appl. Phys. Lett. 101, 031114(2012)

  9. Chemical diffusion: Another factor affecting the magnetoresistance ratio in Ta/CoFeB/ MgO/CoFeB/Ta magnetic tunnel junction

    10. Y. Yang, W. X. Wang, Y. Yao, H. F. Liu, H. Naganuma, T. S. Sakul, X. F. Han, and R. C. Yu
    Appl. Phys. Lett. 101, 012406 (2012)

  10. Crossover behaviors in magnetoresistance oscillations for Nb thin film with rectangular arrays of antidots

    11. W. J. Zhang, S. K. He, H. F. Liu, G. M. Xue, H. Xiao, B. H. Li, Z. C. Wen, X. F. Han, S. P. Zhao, C. Z. Gu, X. G. Qiu and Victor V. Moshchalkov
    EPL 99, 37006 (2012)

  11. Electric-field control of giant magnetoresistance in spin-valves

    12. S. Rizwan, H. F. Liu, X. F. Han, S. Zhang, Y. G. Zha, and S. Zhang
    Spin 2, 1250006(2012)

  12. Wire network behavior in superconducting Nb films with diluted triangular arrays of holes

    13. S. K. He, W. J. Zhang, H. F. Liu, G. M. Xue, B. H. Li, H. Xiao, Z. C. Wen, X. F. Han, S. P. Zhao, C. Z. Gu and X. G. Qiu
    J. Phys.: Condens. Matter 24, 155702 (2012)

  13. Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

    14. G. Q. Yu, J. F. Feng, H. Kurt, H. F. Liu, X. F. Han, and J. M. D. Coey
    J. Appl. Phys. 111, 113906 (2012)

  14. Anomalous behavior of coercivity in ferromagenet/antiferromagnet bilayers

    15. L. Wang, S. G. Wang, Q. L. Ma, H. F. Liu, and X. F. Han
    J. Spintron. Magn. Nanomater. 1, 47 (2012)

  15. Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier

    16. S. M. He, H.L. Bai, G. L. Liu, Q. Li, S. S. Yan, Y. X. Chen, L.M. Mei, H. F. Liu, S. G. Wang, and X. F. Han
    Appl. Phys. Lett. 100, 132406 (2012)

  16. Interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

    17. S. G. Wang, R. C. C. Ward, T. Hesjedal, X. –G. Zhang, C. Wang, A. Kohn, Q. L. Ma, J. Zhang, H. F. Liu, and X. F. Han
    J. Nanosci Nanotechnol. 12, 1006 (2012)

  17. Tunnel magnetoresistance effect in CoFeB/MgAlOx/CoFeB magnetic tunnel junctions

    18. H. F. Liu, Q. L. Ma, Syed Rizwan, D. P. Liu, S. G. Wang and X. F. Han
    IEEE Trans. Magn., 47 (2011) 2716

  18. Nano-elliptic-ring shaped magnetic tunnel junction and its application in MRAM design with spin-polarized current switching (Invited Paper)

    19. X. F. Han, Z. C. Wen, Y. Wang, H. F. Liu, H. X. Wei, and D. P. Liu
    IEEE Trans. Magn., 47 (2011) 2957 (invited)

  19. Evidence for magnon excitation contribution to the magnetoresistance behavior during thermal annealing in CoFeB/MgO/CoFeB MTJs

    20. Q. L. Ma, S. G. Wang, H. X. Wei, H. F. Liu, X. -G. Zhang, and X. F. Han
    Phys. Rev. B 83, 224430 (2011)


    
                                 
 

地址：北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190     电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn