陶玲玲

教育背景

1. 2014.9 至今 香港大学物理系，博士后，合作导师：Prof. Jian Wang
2. 2009.9~2014.6: 中国科学院物理研究所，博士研究生，导师：韩秀峰研究员
3. 2005.9~2009.6: 兰州大学物理科学与技术学院，理学学士

研究方向

1. 暂态电流理论和计算方法
2. 自旋转移力矩和自旋轨道力矩理论和计算方法
3. 自旋相关输运理论

学术论文目录
[1] Ferroelectricity and tunneling electroresistance effect driven by asymmetric polar interfaces in all-oxide ferroelectric tunnel junctions
      L. L. Tao and J. Wang
      Appl. Phys. Lett. 108, 062903 (2016).
[2] Origin of ferromagnetism in aluminum-doped TiO2 thin films: Theory and experiments
      X. Wang, Y. Song, L.L. Tao, J.F. Feng, Y. Sui, J. Tang, B. Song, Y. Wang, Y. Wang, Y. Zhang, and X.F. Han
      Appl. Phys. Lett. 105, 262402 (2014).
[3] Tunneling magnetoresistance in Fe3Si/MgO/Fe3Si(001) magnetic tunnel junctions
      L. L. Tao, S. H. Liang, D. P. Liu, H. X. Wei, Jian Wang and X. F. Han
      Appl. Phys. Lett. 104, 172406 (2014).
[4] Tunneling magnetoresistance of FePt/NaCl/FePt(001)
       L. L. Tao, D. P. Liu, S. H. Liang, X. F. Han and Hong Guo
      EPL, 105, 58003 (2014).
[5] Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study
      L. L. Tao, S. H. Liang, D. P. Liu, and X. F. Han
      J. Appl. Phys. 114, 213906 (2013).
[6] Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga with Metal (Mg, Co, Cr) insertion layer.
      S. H. Liang, L. L. Tao, D. P. Liu, Y. Lu, and X. F. Han
      J. Appl. Phys. 115, 133902 (2014).
[7] E-field effects on electronic and magnetic properties at molecule-metal interfaces: Cu-phthalocyanine adsorbed on Fe(001)
      S. H. Liang, L. L. Tao, D. P. Liu, and X. F. Han
      J. Appl. Phys. 114, 083702 (2013).
[8] Organic magnetic tunnel junctions: The role of metal-molecule interface
      S. H. Liang, D. P. Liu, L. L. Tao, X. F. Han and H. Guo
      Phys. Rev. B. 86, 224419 (2012).
[9] Post magnetic field annealing effect on magnetic and structural properties of Co80Pt20 nanowires and nanotubes fabricated by
      electrochemical method
      S. S. Ali, K. Javed, D. W. Shi, L. L. Tao, J. Jiang, G. J. Zhai and X. F. Han
      J. Appl. Phys. 115, 17A762 (2014).

地址：北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190     电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn