李大来
教育经历
- 2014.7至今：美新半导体（无锡）有限公司，工程师
- 2009.9-2014.7：中国科学院物理研究所磁学国家重点实验室M02 导师：韩秀峰 研究员
- 2005.9-2009.7：吉林大学物理学院物理学专业，学士
研究方向
磁性材料
磁性多层膜
磁场传感器
兴趣领域
三轴AMR传感器
三轴GMR传感器
三轴TMR传感器
电流传感器
主要代表性学术论文目录
[1] Electric-field control of magnetism in Co40Fe40B20/PMNPT multiferroic heterostructures with different ferroelectric phases
Y. Liu, Y. G. Zhao, P. S. Li, S. Zhang, D. L. Li, H. Wu, A. T. Chen, Y. Xu, X. F. Han, S. Y. Li, D. Lin, and H. S. Luo
ACS Appl. Mater. Interfaces 8, 3784 (2016)
[2] Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer
Q. H. Guo, W. Y. Tang, L. Liu, J. Wei, D. L. Li, J. F. Feng, and X. F. Han
Chin. Phys. B 24, 078504 (2015)
[3] Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions
G. Yang, D. L. Li, S. G. Wang, Q. L. Ma, S. H. Liang, H. X. Wei, X. F. Han, T. Hesjedal, R. C. C. Ward, A. Kohn, A. Elkayam, N. Tal, and X.-G. Zhang
J. Appl. Phys. 117, 083904 (2015)
[4] Double-pinned magnetic tunnel junction sensors with spin-valve-like sensing layers
Z. H. Yuan, L. Huang, J. F. Feng, Z. C. Wen, D. L. Li, X. F. Han, Takafumi Nakano, T. Yu, and H. Naganuma
J. Appl. Phys 118, 053904 (2015)
[5] Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films
D. L. Li, Q. L. Ma, S. G. Wang, R. C. C. Ward, T. Hesjedal, X.-G. Zhang, A. Kohn, E. Amsellem,
G. Yang, J. L. Liu, J. Jiang, H. X. Wei, and X. F. Han
Scientific Reports 4, 7277 (2014)
[6] Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature
P. S. Li, A. T. Chen, D. L. Li, Y. G. Zhao, S. Zhang , L. F. Yang , Y. Liu ,M. H. Zhu , H. Y. Zhang, and X. F. Han
Adv. Mater. 26, 4320 (2014)
[7] PMA in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB MTJ
B. S. Tao, D. L. Li, Z. H. Yuan, H. F. Liu, S. S. Ali, J. F. Feng, H. X. Wei, X. F. Han, Y. Liu, Y. G. Zhao, Q. Zhang, Z. B. Guo, and X. X. Zhang
Appl. Phys. Lett. 105, 102407 (2014)
[8] Conductance enhancement due to interface magnons in electron-beam evaporated MgO MTJs with CoFeB free layer deposited
at different pressure
P. Guo, D. L. Li, J. F. Feng, H. Kurt, G. Q. Yu, J. Y. Chen, H. X. Wei, J. M. D. Coey, and X. F. Han
J. Appl. Phys. 116, 153905 (2014)
[9] Transport properties in sputtered CoFeB/MgAl2O4/CoFeB magnetic tunnel junctions
B. S. Tao, D. L. Li, H. F. Liu, H. X. Wei, J. F. Feng, S. G. Wang, and X. F. Han
IEEE Trans. Magn. 50, 4401004 (2014)
[10] Symmetry-dependent electron-electron interaction in coherent tunnel junctions resolved by measurements of zero-bias anomaly
L. Liu, J. S. Niu, L. Xiang, J. Wei, D. L. Li, J. F. Feng, X. F. Han, X. –G. Zhang, and J. M. D. Coey
Phys. Rev. B 90, 195132 (2014)
[11] Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
L. Liu, L. Xiang, H. Q. Guo, J. Wei, D. L. Li, Z. H. Yuan, J. F. Feng, X. F. Han, and J. M. D. Coey
AIP Advances 4, 127102 (2014)
[12] Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
D. L. Li, J. F. Feng, G. Q. Yu, P. Guo, J. Y. Chen, H. X. Wei, X. F. Han, and J. M. D. Coey
J. Appl. Phys. 114, 213909 (2013)
[13] MgO-based double barrier magnetic tunnel junctions with synthetic antiferromagnetic free layer
D. L. Li, J. F. Feng, G. Q. Yu, H. X. Wei, X. F. Han, and J. M. D. Coey
IEEE Trans. Magn. 49, 5204 (2013)
[14] Structure of epitaxial L10-FePt/MgO perpendicular magnetic tunnel junctions
A. Kohn, N. Tal, A. Elkayam, A. Kovacs, D. L. Li, S. G. Wang, S. Ghannadzadeh, T. Hesjedal, and R. C. C. Ward
Appl. Phys. Lett. 102, 062403 (2013)
[15] Nonlocal magnetoresistance due to Lorentz force in linear transport region in bulk silicon
C. H. Wan, Z. H. Yuan, P. Liu, H. Wu, P. Guo, D. L. Li, and S. S. Ali
Appl. Phys. Lett. 103, 262404 (2013)
地址：北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190 电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn