Dr. & Prof. Xiufeng Han (X. F. Han)

State Key Laboratory of Magnetism, Institute of Physics

Chinese Academy of Science

No.8 Nansan Street , Zhongguancun, P.O. Box 603, Beijing 100190, China

Tel: 86-10-8264-9268 / Fax: 86-10-8264-9531

Email: xfhan@aphy.iphy.ac.cn

Research Areas

Spintronics Materials and its Physics, Magnetosensitive Sensors & MRAM Prototype Devices

Awards and Distinctions

•  Chief Scientist (09/2006-10/2011), 973 Project No.2006CB932200, Ministry of Science and Technology (MOST), China

•  Principal Scientist (04/2002-09/2006), 973 sub-project No.2001CB610601, Ministry of Science and Technology (MOST), China

•  Outstanding Yong Researcher Fund from National Natural Science Foundation of China in 2003.

•  Financial support of Hundred Outstanding Young Researchers Program from CAS in 2000.

•  Best Paper and Young Researcher Award, 18/09/1997 , Awarded by Organizing Chairman and President of IUMRS in the 4th IUMRS International Conference in Asia, Tokyo, Japan

•  The Second Grade Prize in Science and Technology Progress, 01/1994, Awarded by Educational Committee of Jilin Province .

Competitive Funds (1994-Onwards)

Attracted ~ US $2 million research funds since 1994 in China .

Previous funds: Four NSFC general funds supported in 1994, 1996, 2003, and 2006.

Current holdings: (1) Outstanding Innovation Research Team Fund between 01/2008-12/2010.

(2) A NSFC general fund between 01/2009-12/2011.

Publications (1990-Onwards)

Total published Journal SCI Papers = 140 between 1990 and 2008

Patent applications submitted and authorized = 42 + 5 during between 2003 and 2008.

Education

1990-1993 PhD (Physical Chemistry)

Institute of Theoretical Chemistry, Jilin University , Changchun , China

1987-1990 MS (Condensed Matter Physics)

Department of Physics, Jilin University , Changchun , China

1980-1984 BSc (Physics)

Lanzhou University , Lanzhou , China

Career Overview

•  Institute of Physics , CAS (Professor, 04/2002--onwards)

•  Trinity College , Ireland (Visiting Researcher, 05/2001--03/2002)

•  University of New Orleans , USA (Visiting Researcher, 01/2001--05/2001)

•  Tohoku University , Japan (Special Foreign Researcher, 12/1998--12/2000)

•  Brazil Physical Research Center , Brazil (Visiting Researcher, 01/1998--12/1998)

•  Institute of Semiconductors , CAS (Associate Professor, 10/1996--12/1997)

•  Institute of Physics , CAS (Postdoctoral Research Fellow, 07/1994--09/1996)

•  Jilin University , China ( Physics Lecturer, 07/1993--06/1994 )

•  Jilin University , China ( Assistant Professor, 07/1984--09/1987 )

Ten Recent Typical Publications on Spintronics

[1] Fabrication of high- MR tunnel junctions using Co 75 Fe 25 ferromagnetic electrodes.

X. F. Han * , M. Oogane, H. Kubota, Y. Ando, and T. Miyazaki

Appl. Phys. Lett. 77 (2000) 283-285.

[ 2 ] Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high-magneto - resistance and low resistance .

X. F. Han * , Andrew C. C. Yu, M. Oogane, J. Murai, T. Daibou, and T. Miyazaki

Phys. Rev. B , 63 (2001) 224404-224411.

[3] Oscillatory Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

Z. M. Zeng, X. F. Han *, W. S. Zhan, Y. Wang, Z. Zhang, and S. Zhang .

Phys. Rev. B. 72 (2005) 05 4419-1-5

[4] Magnetic/nonmagnetic/magnetic tunnel junction based on hybrid organic LB-films

T. X. Wang, H. X. Wei, Z. M. Zeng, and X. F. Han *, Z. M. Hong and G. Q. Shi

Appl. Phys. Lett. 88 (2006) 242505.

[5] First-principles theory of quantum well resonance in double barrier MTJs

Y. Wang, Z.Y. Lu, X.G. Zhang, and X. F. Han* ,

Phys. Rev. Lett . 97 (2006) 087210.

[6] Probing spin flip scattering in ballistic nanosystems

    Z. M. Zeng, J. F. Feng, Y. Wang, X. F. Han *, W. S. Zhan , X. G. Zhang, and Z. Zhang

Phys. Rev. Lett . 97 (2006) 106605 .

[7] Nanoring MTJ and its application in MRAM demo devices with spin-polarized current switching ( Invited ),

X. F. Han * Z. C. Wen, and H. X. Wei,

J. Appl. Phys. 103 (2008) 07E933.

[8] Magnetic switching of ferromagnetic nanotubes.

R. Sharif , S. Shamaila , M. Ma, L. D. Yao, R. C. Yu, X. F. Han *, M. Khaleeq-ur-Rahman

Appl. Phys. Lett. 92 (2008) 032505.

[9] Effect of Co interlayers in Fe/MgO/Fe magnetic tunnel junctions

Y. Wang, X. F. Han * and X. G. Zhang

Appl. Phys. Lett. 93 (2008) 172501 .

[10] Effects of the current on the nanoscale ring-shaped magnetic tunnel junctions

H. X. Wei , J. X. He, Z. C. Wen, X. F. Han *, S. Zhang.

Phys. Rev. B 77 (2008) 134432.