List of the selected patents：

[50] Giant magnetoresistance devices, magnon field effect transistors and magneton tunnel junctions
        Xiufeng Han，Ping Tang，Chenyang Guo，Caihua Wan
        Patent No.： ZL201711415711.5        
        Patent No.： US16,225,820                

[49] Magnetoelectric isolators, magnetic memories, magnetoelectric current sensors and magnetic
        temperature sensors
        Xiufeng Han，Hao Wu，Caihua Wan
        Patent No.： ZL201510659034.6         

[48] Programmable spin logic devices and electronic devices including them
        Xiufeng Han，Xuan Zhang，Caihua Wan
        Patent No.： ZL201610190767.4         
        Patent No.： US10153425B2             

[47] Spin logic devices and electronic devices including them
        Xuan Zhang，Caihua Wan，Xiufeng Han
        Patent No.： ZL201610064129.8          

[46] Current driven magnetic random access memory and spin logic devices
        Caihua Wan，Xuan Zhang，Xiufeng Han
        Patent No.： ZL201510574526.5          

[45] Logic devices based on reversible electric resistance effect
        Xiufeng Han，Dalai Li，Dongping Liu
        Patent No.： ZL201110305257.4          

[44] A vertical transistor based magnetic multilayer random access memory
        Dongping Liu，Xiufeng Han*
        Patent No.： ZL201510659034.6          

[43] Magnetic access and magnetic random access devices
        Shiheng Liang，Dongping Liu，Zhenchao Wen，Xiufeng Han*
        Patent No.： ZL200910238243.8          

[42] A magnetic random access memory, magnetic logic device and spin microwave oscillator
        Junyang Chen，Dongping Liu，Zhenchao Wen，Xiufeng Han*，Shufeng Zhang
        Patent No.： ZL200910076048.X          

[41] Logic elements and magnetic logic element arrays based on double barrier magnetic tunnel
         junctions
        Zhongming Zeng，Hongxiang Wei，Lixiang Jiang，Xiufeng Han*，Zilong Peng，
        Wenshan Zhan
        Patent No. ZL200610072795.2          

[40] Magnetic logic elements based on ring closed magnetic multilayers
        Xiufeng Han*，Zhongming Zeng，Yunan Han，Lixiang Jiang，Zilong Peng，Wenshan Zhan
        Patent No.： ZL200610072797.1          
        Patent No.： US8236576B2                

[39] Spin transfer moment magnetic random access memory with ring magnetic tunnel junction
        Xiufeng Han，Jiangying Qin，Houfang Liu，Yaojun Zhang，Peng Guo，Yiran Chen，
        Hai Li，Hongxiang Wei，Jiafeng Feng，Wenshan Zhan
        Patent No.： ZL201510634769.3          

[38] Magnetic tunnel junction with closed shape (patent for utility model)
        Bingshan Tao, Dalai Li, Houfang Liu, Xiufeng Han
        Patent No.： ZL201420275983.5          

[37] Nanomultilayers, FET, sensors, random access memory and preparation methods
        Xiufeng Han, Houfang Liu, Syed Rizwan
        Patent No.： ZL201110304804.7          

[36] An electric field modulated random memory cell array and memory
        Xiufeng Han, Guoqiang Yu, Yiran Chen
        Patent No.： ZL201110304812.1          

[35] A magnetic multilayer for magnetic random access memory
        Guoqiang Yu，Hongxiang Wei，Wenshan Zhan，Xiufeng Han
        Patent No.： ZL201010259764.4          

[34] A look up table based on nanoring magnetic multilayers
        Guoqiang Yu，Jinghua Ni，Jingang Wu，Minghua Ji，Xiufeng Han
        Patent No.： ZL201010234523.4          

[33] A magnetic random access memory cell array, memory and its reading and writing method
        Yi Wang，Hai Li，Xiufeng Han
        Patent No.： ZL201010226272.5          

[32] A magnetic multilayer unit and its preparation and magnetic moment reversal method
        Zhenchao Wen，Guoqiang Yu，Yi Wang，Hongxiang Wei，Shufeng Zhang，Xiufeng Han*
        Patent No.： ZL 200910241587.4          

[31] Magnetic multilayers with geometric shapes and their preparation methods and Applications
        Yunan Han，Zhenchao Wen，Guanxiang Du，Jing Zhao，Dongping Liu，Xiufeng Han*
        Patent No.： ZL200710063352.1          

[30] A magnetic multilayer with metal core and its preparation method and Application
        Lixiang Jiang，Ming Ma，Yunan Han，Qihang Tan，Hongxiang Wei，Xiufeng Han*
        Patent No.： ZL200610011167.3         
        Patent No.： US7,936,595 B2            

[29] A closed shape magnetic multilayer and its preparation and Application
        Lixiang Jiang，Ming Ma，Yunan Han，Qihang Tan，Hongxiang Wei，Xiufeng Han*
        Patent No.： ZL200610011166.9         

[28] Magnetic random access memory based on closed magnetic multilayer and its control method
        Xiufeng Han*，Ming Ma，Lixiang Jiang，Yunan Han，Qihang Tan，Hongxiang Wei
        Patent No.： ZL200610011168.8         

[27] Magnetic random access memory based on ring magnetic multilayers and its control method
        Xiufeng Han*，Ming Ma，Lixiang Jiang，Yunan Han，Qihang Tan，Hongxiang Wei
        Patent No.： ZL200610000191.7         

[26] A ring magnetic multilayer and its preparation and application
        Ming Ma，Xiufeng Han*，Lixiang Jiang，Yunan Han，Qihang Tan，Hongxiang Wei
        Patent No.： ZL200510135365.6         

[25] A kind of magnetic multilayer with metal core and its preparation method and application
        Ming Ma，Xiufeng Han*，Lixiang Jiang，Yunan Han，Qihang Tan，Hongxiang Wei
        Patent No.： ZL200510135370.7         

[24] A magnetic tunnel junction for devices and its application
        Hongxiang Wei，Ming Ma，Qihang Tan，Xiufeng Han*，Wenshan Zhan
        Patent No.： ZL200510130665.5          

[23] A magnetic random access memory based on vertical current writing and its control method
        Zilong Peng，Xiufeng Han*，Sufen Zhao，Weining Wang，Wenshan Zhan
        Patent No.： ZL200410030729.X          
        Patent No.： US7,480,171 B2               

[22] A nano magnetic multilayer film for temperature sensor and its manufacturing method
        Xiufeng Han，Zhonghui Yuan，Pan Liu，Guoqiang Yu，Jiafeng Feng，Dianlin Zhang
        Patent No.： 特許第6105817号          
        Patent No.： US9484527B2              

[21] A magnetic nano multilayer film and its preparation method for magnetic sensor
        Hao Wu，Jiafeng Feng，Junyang Chen，Xiufeng Han
        Patent No.： ZL201210285542.9         

[20] Anisotropic modulated magnetic thin film structure, magnetic sensor and preparation method
        Tian Yu，Wenxiu Wang，Xiufeng Han
        Patent No.： CN102810630B         

[19] A magnetic nano multilayer film for magnetic sensor and its manufacturing method
        Qinli Ma，Houfang Liu，Xiufeng Han
        Patent No.： ZL201010195799.6          
        Patent No.： US9568564B2              

[18] A planar integrated three-dimensional magnetic field sensor and its preparation method and
         application
        Qihang Tan，Xiufeng Han*，Lei Wang，Ming Ma，Hongxiang Wei，Wenshan Zhan
        Patent No.： ZL200510126428.1          

[17] Magnetic resistance of multilayers and its application
        Hongxiang Wei，Jing Zhao，Guanxiang Du，Lei Wang，Yinjun Wang，Xiufeng Han*
        Patent No.： ZL200510123229.5          

[16]A layer integrated 3D magnetic field sensor and its preparation method and Application
        Lei Wang，Xiufeng Han*，Hongxiang Wei，Handong Yang，Guangjie Zhai
        Patent No.： ZL200510116757.8           

[15] Linear magnetic field sensor and its making method
        Lei Wang，Xiufeng Han*，Feifei Li，Lixiang Jiang，Xiequn Zhang，Wenshan Zhan
        Patent No.： ZL200510072052.0          

[14] Switching magnetic field sensor for current overload protector
        Lei Wang，Yikun Fang，Tianxing Wang，Xiufeng Han*
        Patent No.： ZL200410090614.X          

[13] Spin valve type digital magnetic field sensor and its fabrication method
        Lei Wang，Jing Zhao，Yunan Han，Xiufeng Han*
        Patent No.： ZL200410090615.4          

[12] Spin microwave oscillator and spin microwave detector
        Yi Wang，Guoqiang Yu，Dongping Liu，Zhenchao Wen，Xiufeng Han
        Patent No.： ZL200810222965.X          

[11] A magnetic single-layer film microwave oscillator and its manufacturing method, control method
        and Application
        Zhenchao Wen，Hongxiang Wei，Shufeng Zhang，Xiufeng Han
        Patent No.： ZL200810119751.X          

[10] Double magnetic barrier tunnel junction and spin electronics devices
        Xiufeng Han，Wenjie Kong，Li Huang，Hao Wu，Caihua Wan
        Patent No.： ZL201510846946.4          

[9] Magnetic tunnel junctions with negative differential resistance and spintronic devices including         Jun Jiang，Xuan Zhang，Peng Guo，Xiaoguang Zhang，Xiufeng Han
        Patent No.： ZL201510426980.6          

[8] Magnetic tunnel junctions with quantum effects and spin diodes and transistors including them
        Zhenchao Wen，Bingshan Tao，Zhonghui Yuan，Lixiang Jiang，Xiufeng Han
        Patent No.： ZL201510382329.3          

[7] A spin transistor
        Dongping Liu，Zhenchao Wen，Shamaila，Xiufeng Han*
        Patent No.： ZL200710099739.2          

[6] A MgO double barrier magnetic tunnel junction with quantum effect and its application
        Yan Wang，Zhongyi Lu，Xiaoguang Zhang，Xiufeng Han*
        Patent No.： ZL200610080970.2          

[5] Transistor based on resonant tunneling effect of double barrier tunnel junction
        Zhongming Zeng，Xiufeng Han*，Guanxiang Du，Hongxiang Wei，Feifei Li，Wenshan Zhan
        Patent No.： ZL200510064341.6          

[4] Nano multilayer film,field effect tube,sensor,random accessory memory and preparation
        method
        Xiufeng Han，Houfang Liu，Syed Rizwan，Dalai Li，Peng Guo，Guoqiang Yu，
        Dongping Liu，Yiran Chen
        Patent No.： US9559295B2          

[3] A novel electric field regulated complementary field effect transistor and its logic circuit
        Xiufeng Han，Peng Guo，Yiran Chen，Dongping Liu
        Patent No.： ZL201110304805.1          

[2] Nano multilayer film, field effect transistor, sensor, random access memory and preparation method
        thereof
        ZL201110290063.1
        Patent No.： ZL201510659034.6          

[1] A spin field effect transistor and its magnetic memory
        Xiufeng Han*，Guoqiang Yu，Wenxiu Wang，Jun Luo，Xiaoguang Zhang
        Patent No.： ZL 201010227339.7          

地址：北京市海淀区中关村南三街8号 中国科学院物理研究所M02组 邮编100190  电话：+86-10-82649268 传真：+86-10-82649485 电子邮件：xfhan@iphy.ac.cn