1.Chemical diffusion: Another factor affecting the magnetoresistance ratio inTa/CoFeB/MgO/CoFeB/Ta magnetic tunnel junction，

Yang Y, Wang WX, Yao Y, Liu HF, Naganuma H, Sakul TS, Han XF，

Applied Physics Letters，101 (2012) 012406.

2.Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-basedmagnetic tunnel junctions with Mg-doped ZnO barrier，

He SM, Bai HL, Liu GL,Li Q, Yan SS, Chen YX, Mei LM, Liu HF, Wang SG, Han XF，

Applied Physics Letters，100 (2012) 132406.

3.Tuning asymmetry parameter of Fano resonance of spoof surface plasmonsby modes coupling，

Cheng F, Liu HF, Li BH, Han J, XiaoH, Han XF, Gu CZ, Qiu XG，

Applied Physics Letters，100（2012）131110.

4.Exchange-bias like hysteretic magnetoelectric-coupling of as-grownsynthetic antiferromagnetic structures，

Rizwan S, Zhang S, Zhao YG, Han XF，

Applied Physics Letters，101 (2012) 082414.

5.Spinel oxides: Δ1 spin-filter barrier for a class of magnetic tunnel junctions，

J Zhang, X -G Zhang, and X F Han，

Applied Physics Letters，100 (2012) 222401.

6.Rotating field entropy change in hexagonal TmMnO3 single crystalwith anisotropic paramagnetic response，

Jin-Ling Jin, Xiang-Qun Zhang, Heng Ge, Zhao-Hua Cheng，

Physical Review B，85 (2012 )214426.

7.Competition between cotunneling, Kondo effect, and direct tunneling in discontinuoushigh-anisotropy magnetic tunnel junctions，

Ciudad D, Wen ZC, Hindmarch AT, Negusse E, Arena DA, Han XF, Marrows CH，

Physical Review B，85 (2012) 214408.

8.Junction resistance, tunnel magnetoresistance ratio, and spin-transfer torquein in Zn-doped MTJs，

Liu DP, Han XF, Guo H，

Physical Review B，85 (2012) 245436.

9.Adsorption of tris(8-hydroxyquinoline)aluminum molecules on cobalt surfaces，

Wang YP, Han XF, Wu YN, Cheng HP，

Physical Review B，85 (2012) 144430.

10.Organic magnetic tunnel junctions: The role of metal-molecule interface，

Liang SH, Liu DP, Tao LL, Han XF, Guo H，

Physical Review B，86 (2012) 224419.

11.Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films,

D S Shang, L Shi, J R Sun and B G Shen,

Nanotechnology，22 (2011)254008.

12.Evidence of bulk antiferromagnet spin rearrangement during ferromagnetic layer reversal in a double exchange bias sandwich,

Y Xu, Q Ma, J W Cai, and L Sun,

Physical Review B，84(2011)054453.