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  Position >  Awards and Patents                                                                                    Institute of  Physics 

 

 

Main Awards  and Patents

Patents

Year

Appl. No.

Patent name

State of patent

Patent Type

1995

90110811.4  

Melt-spun Fe-based rear earth permanent magnet and its preparation.

Authorized

Invention

1996

92105419.X  

Co modified g-Fe2O3 powder with alternative magnetic thermal stability and its preparation

Authorized

Invention

1997

95227894.4  

Electric and magnetic compatible device for constant current magnetron and radio frequency (rf) co-sputtering.

Authorized

Invention

1997

95205934.7

Isotropic magnetic sensor.       

Authorized

Invention

1997

93105618.70  

A Ga-doped rare-earth-iron permanent magnetic carbonide and its preparation

Authorized

Invention

1998

93112022.6  

The 3:39 permanent magnetic nitride (carbonide) and its preparation.

Authorized

Invention

1999

9400108.3  

The giant magnetoresistance and preparation of the CoCu-based granular film.

Authorized

Invention

1999

98205666.4  

The high resolution magnetic spin encoder with the high sensitivity probe head.

Authorized

Invention

2000

00107446.6

A rare-earth Fe-based compound with large magnetic entropy change

Authorized

Invention

2000

00132620.1

crystal growth method with growth control

Authorized

Invention

2000

00252995.5

a sample holder for microscopy 

Authorized

Utility model

2001

01124191.8

A method for the preparation of anisotropic SmCo5 permanent magnetic materials

Authorized

Invention

2001

01130856.7

A method for the preparation of anisotropic RCo5 permanent magnetic ribbion

Authorized

Invention

2002

20021163278

Rare-earth Fe-based compounds for magnetic refrigeration with large magnetic entropy chenge and their preparation method

Appied and Accepted

Invention

2002

20002125681.0

preparation method for ferromagnetic shape memory single crystals

Appied and Accepted

Invention

2002

20002121547.2

preparation method for rare earth magnet of 3:29

Appied and Accepted

Invention

2002

20002149352.9

melt-spin method for shape memory materials

Appied and Accepted

Invention

2002

02293463.4

Ferromagnetic films containing a nano-oxide layer exchange biased by antiferromagnets

Authorized

Utility model

2003

2003121051.1

Rare-earth Fe-based compounds for magnetic refrigeration with large magnetic entropy chenge and their preparation method

Appied and Accepted

Invention

2003

200310116066.9

preparation of ferromagnetic shape memory alloys with two-way shape memory effect

Appied and Accepted

Invention

2003

2003101135351

A magnetic random access memory 

Appied and Accepted

Invention

2003

200310118596.7

Improvement of the pinning effect of L10 antiferromagnets via doping

Appied and Accepted

Invention

2003

200320103297.1

A magnetic random access memory 

Appied and Accepted

Utility model

2004

200410033795.2

Solid rotating target driven by coolants

Appied and Accepted

Invention

2004

200410029926.X

A new  method to synthesize the single molecular magnets (Mn1-xCrx)12-ac

Appied and Accepted

Invention

2004

200410074350.9

A magnetic random access memory based on carbon nanotubes

Appied and Accepted

Invention

2004

200410080016.4

A transistor based on resonant tunneling effect of double barrier tunneling junctions

Appied and Accepted

Invention

2004

200410081170.3

A magnetic sensor based on resonant tunneling effect of double barrier tunneling junctions

Appied and Accepted

Invention

2004

200410030893.0

A magnetic tunnel junction device with ferromagnetic composite electrodes

Appied and Accepted

Invention

2004

200410033657.4

A magnetic tunnel junction device with resonance tunneling effect

Appied and Accepted

Invention

2004

200410090615.4

A digital magnetic field sensor based on spin-valve magnetoresistance element and compartor circuit

Appied and Accepted

Invention

2004

200410090613.5

A temperature sensor based on spin-valve-type magnetoresistance

Appied and Accepted

Invention

2004

200410090614.X

A magnetic sensor applied on protection of overload current

Appied and Accepted

Invention

2004

200410030729.x

Fabrication and control for a magnetic random access memory based on perpendicular current writing method

Appied and Accepted

Invention

2004

200410086219.4

A balance driving magnetic random access memory based on peripheric integrated-circuit

Appied and Accepted

Utility model

2004

200420093158.x

A magnetic random access memory based on carbon nanotubes

Appied and Accepted

Utility model

2004 200410003419.9 Magnetic field-controlled superelastic single crystals

Appied and Accepted

Invention

2004 200410080015.X Synthesization of two-way shape memory single crystals

Appied and Accepted

Invention

2005 200510135370.7 Fabrication methods and applications of ring-line-type magnetic multilayres Appied and Accepted Invention
2005 200510135365.6 Fabrication methods and applications of ring-type magnetic multilayres Appied and Accepted Invention
2005 200510130665.5 Fabrication methods and applications of magnetic tunneling junctions for sensors Appied and Accepted Invention
2005 200510126428.1 Fabrication methods and applications of in-plane integrated three-dimensional magnetic field sensors Appied and Accepted Invention
2005 200510123229.5 Fabrication methods and applications of magnetic multilayers with linear magnetoresistance effect for sensors Appied and Accepted Invention
2005 200510116757.8 Fabrication methods and applications of sequential layered-type integrated three- dimensional magnetic field sensor Appied and Accepted Invention
2005 200510086523.3 A spin-valve type magnetoresistance device and microfabrication method based on hard magnetic materials Appied and Accepted Invention
2005 200510089145.4 A micro-fabrication method of the high quality tip for scanning tunnel microscopy Appied and Accepted Invention
2005 200510072052.0 A linear magnetic Sensor based on magnetic Tunneling Junctions and fabrication method Appied and Accepted Invention
2005 200510011815.0 Hybrid perovskite-type oxide films and their device applications Appied and Accepted Invention
2005 200510064341.6 A transistor based on resonant tunneling effect of double barrier tunneling junctions Appied and Accepted Invention
2005 200510056941.8 Magnetic/nonmagnetic/magnetic multilayers based on key hybrid organic LB-films and their device applications Appied and Accepted Invention
2005 200510008613.0 Compositionally modulated hybrid multilayers and applications based on perovskite-type half-metals Appied and Accepted Invention
2005 200510005035.5 A sensitive biological sensor based on giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) Appied and Accepted Invention
2006 200610057375.7 Fabrication methods and applications of in-plane integrated three-dimensional superconductor hybrid magnetic field sensors Appied and Accepted Invention
2006 200610056830.1 Fabrication methods and applications of closed elliptic- or rectangle-type superconductor multilayers Appied and Accepted Invention
2006 200610080970.2 Double MgO(001)-barrier magnetic tunnel junctions and their applications based on the quantum-well effects Appied and Accepted Invention
2006 200610072797.1 Magnetic logic devices based on ringed-type magnetic tunnel junctions Appied and Accepted Invention
2006 200610072795.2 Magnetic logic devices based on double barrier magnetic tunnel junctions Appied and Accepted Invention
2006 200610011168.8 Fabrication, reading and writing methods of magnetic random access memory based on closed-ring-with-metal line-type magnetic multilayres Appied and Accepted Invention
2006 200610072720.4 Fabrication methods of single or array-type nanowires Appied and Accepted Invention
2006 200610000191.7 Fabrication, reading and writing methods of magnetic random access memory based on ring-line-type magnetic multilayres Appied and Accepted Invention
2006 200610011167.3 Fabrication, reading and writing methods of magnetic random access memory based on  closed-ring-with-metal line-type magnetic multilayres Appied and Accepted Invention

 

Awards 

2005

*

Project:Nanocrystalline Rare-earth Iron-based Permanent Magnetic Materials                                                                                              Award:The first prize of Beijing Municipal Science and Technology Award

1998

*

Project: High pressure device used under low temperature and high magnetic field for the study of the physics property of solids.

Award: Third class prize of science and technique progress awarded by CAS.

*

Project: A study on the structure and magnetic property of the new R3(Fe,T)20 and its interstitial compounds.

Award: Third class prize of natural science awarded by CAS..

1997

*

Project: Stability, magnetic property and Mossbauer study of the 2:17 rare-earth compounds.

Award: Second class prize of the natural science awarded by the national education committee.

*

Project: The nuclear magnetic resonance and Mossbauer study of the Nd-Fe-B alloys with low Nd contents.

Award: Second class prize awarded by Gansu province.

*

Project: Structure, phase relation, magnetic and superfine interaction of a new-type R-Fe compounds (R = rare earth)

Award: Yeqisun prize awarded by the physics association of China

1996

*

Project: The utilization of magnetic processing technique in oil field

Award: Third class prize of national science and technique progress

1995

*

Project: The utilization of magnetic processing technique in oil field

Award: First class prize of science and technique progress awarded by CAS.

*

Projec: The structure and magnetic property of interstitial rare-earth intermetallic compounds

Award: Third class prize of natural science awarded by CAS

 

 

Chinese

State Key Laboratory of  Magnetism,  Institute of  Physics, CAS
P.O. Box 603,  Bejing 100190, P. R, China
Tel:  086-10-82649253             Fax:  086-10-82649485
Email: magnetic@aphy.iphy.ac.cn